No. |
Part Name |
Description |
Manufacturer |
1 |
1N4001 |
Silicon diffusion diode for low power general applications |
AEG-TELEFUNKEN |
2 |
1N4001 |
V(rrm): 50V; 1A silicon rectifier diode. For industrial application |
International Rectifier |
3 |
1N4002 |
Silicon diffusion diode for low power general applications |
AEG-TELEFUNKEN |
4 |
1N4002 |
V(rrm): 100V; 1A silicon rectifier diode. For industrial application |
International Rectifier |
5 |
1N4003 |
Silicon diffusion diode for low power general applications |
AEG-TELEFUNKEN |
6 |
1N4003 |
V(rrm): 200V; 1A silicon rectifier diode. For industrial application |
International Rectifier |
7 |
1N4004 |
Silicon diffusion diode for low power general applications |
AEG-TELEFUNKEN |
8 |
1N4004 |
V(rrm): 400V; 1A silicon rectifier diode. For industrial application |
International Rectifier |
9 |
1N4005 |
Silicon diffusion diode for low power general applications |
AEG-TELEFUNKEN |
10 |
1N4005 |
V(rrm): 600V; 1A silicon rectifier diode. For industrial application |
International Rectifier |
11 |
1N4006 |
Silicon diffusion diode for low power general applications |
AEG-TELEFUNKEN |
12 |
1N4006 |
V(rrm): 800V; 1A silicon rectifier diode. For industrial application |
International Rectifier |
13 |
1N4007 |
Silicon diffusion diode for low power general applications |
AEG-TELEFUNKEN |
14 |
1N4007 |
V(rrm): 1000V; 1A silicon rectifier diode. For industrial application |
International Rectifier |
15 |
1S1314 |
Silicon planar diode, communication and industrial applications, Low-Level Modulation |
TOSHIBA |
16 |
2N1021 |
PNP germanium power transistor for industrial applications |
Motorola |
17 |
2N1022 |
PNP germanium power transistor for industrial applications |
Motorola |
18 |
2N178 |
PNP germanium power transistor for non-critical applications requiring economical components |
Motorola |
19 |
2N1906 |
Germanium Diffused Collector PNP, typical application High Power Amplifier |
SGS-ATES |
20 |
2N2802 |
Dual PNP silicon annular transistors designed for differential applications |
Motorola |
21 |
2N2803 |
Dual PNP silicon annular transistors designed for differential applications |
Motorola |
22 |
2N2804 |
Dual PNP silicon annular transistors designed for differential applications |
Motorola |
23 |
2N2805 |
Dual PNP silicon annular transistors designed for differential applications |
Motorola |
24 |
2N2806 |
Dual PNP silicon annular transistors designed for differential applications |
Motorola |
25 |
2N2807 |
Dual PNP silicon annular transistors designed for differential applications |
Motorola |
26 |
2N3904 |
NPN Silicon Transistor (General small signal application) |
AUK Corp |
27 |
2N3906 |
PNP Silicon Transistor (General small signal application Switching application) |
AUK Corp |
28 |
2N456A |
PNP high-current germanium power transistor for industrial applications |
Motorola |
29 |
2N457A |
PNP high-current germanium power transistor for industrial applications |
Motorola |
30 |
2N458A |
PNP high-current germanium power transistor for industrial applications |
Motorola |
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