| No. |
Part Name |
Description |
Manufacturer |
| 1 |
CXK581000AP-10LL |
131072-word x 8-bit High Speed CMOS Static RAM |
SONY |
| 2 |
CXK581000AP-10SL |
131072-word x 8-bit High Speed CMOS Static RAM |
SONY |
| 3 |
CXK581000ATM/AYM/AM/AP-10LL |
131072-word x 8-bit High Speed CMOS Static RAM |
SONY |
| 4 |
CXK581000ATM/AYM/AM/AP-10SL |
131072-word x 8-bit High Speed CMOS Static RAM |
SONY |
| 5 |
CXK58257AP-10L |
32768-WORD X 8-BIT HIGH SPEED CMOS STATIC RAM |
SONY |
| 6 |
CXK58257AP-10LL |
32768-WORD X 8-BIT HIGH SPEED CMOS STATIC RAM |
SONY |
| 7 |
DS2401AP-103-001+T |
Silicon Serial Number |
MAXIM - Dallas Semiconductor |
| 8 |
HM514258AP-10 |
100ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM |
Hitachi Semiconductor |
| 9 |
HM62256AP-10 |
32/768-word x 8-bit High Speed CMOS Static RAM |
Hitachi Semiconductor |
| 10 |
HM6264AP-10 |
8192-word x 8-bit high speed CMOS static RAM, 100ns |
Hitachi Semiconductor |
| 11 |
HN58C256AP-10 |
256k EEPROM (32-kword x 8-bit) Ready/Busy and RES function (HN58C257A) |
Hitachi Semiconductor |
| 12 |
HN58C256AP-10 |
Memory>EEPROM>Parallel EEPROM |
Renesas |
| 13 |
HN58V65AP-10 |
64 k EEPROM (8-kword x 8-bit) Ready/Busy function/ RES function (HN58V66A) |
Hitachi Semiconductor |
| 14 |
HN58V65AP-10 |
Memory>EEPROM>Parallel EEPROM |
Renesas |
| 15 |
HN58V65AP-10E |
Memory>EEPROM>Parallel EEPROM |
Renesas |
| 16 |
HN58V66AP-10 |
64 k EEPROM (8-kword x 8-bit) Ready/Busy function/ RES function (HN58V66A) |
Hitachi Semiconductor |
| 17 |
HN58V66AP-10 |
Memory>EEPROM>Parallel EEPROM |
Renesas |
| 18 |
HN58V66AP-10E |
Memory>EEPROM>Parallel EEPROM |
Renesas |
| 19 |
JV1AP-100V |
JV-relay. Flat type power relay. 1 form A, hing capacity type. Coil voltage 100 V DC. Sealed type. |
Matsushita Electric Works(Nais) |
| 20 |
KM41256AP-10 |
256K x 1-bit DRAM, 100ns |
Samsung Electronic |
| 21 |
TC514100AP-10 |
100 ns, 1-bit generation dynamic RAM |
TOSHIBA |
| 22 |
TC514101AP-10 |
100 ns, 1-bit generation dynamic RAM |
TOSHIBA |
| 23 |
TC514400AP-10 |
100 ns, 4-bit generation dynamic RAM |
TOSHIBA |
| 24 |
TC514402AP-10 |
100 ns, 4-bit generation dynamic RAM |
TOSHIBA |
| 25 |
TC514410AP-10 |
100 ns, 4-bit generation dynamic RAM |
TOSHIBA |
| 26 |
TMM2063AP-10 |
100ns ; 80mA; V(cc): -0.5 to +7.0V; 0.8W; 65,536 bits high speed and low power static access memory |
TOSHIBA |
| 27 |
TMP82C51AP-10 |
PROGRAMMABLE COMMUNICATION INTERFACE |
TOSHIBA |
| 28 |
TMP82C55AP-10 |
CMOS PROGRAMMABLE PERIPHERAL INTERFACE |
TOSHIBA |
| | | |
