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Datasheets for AT 6

Datasheets found :: 48
Page: | 1 | 2 |
No. Part Name Description Manufacturer
1 ATTINY11 1-Kbyte In-System programmable Flash Program Memory, 32 byte SRAM, Up to 6 MIPS throughput at 6 Mhz. Atmel
2 AUIRF7648M2TR 60V Automotive Grade Single N-Channel HEXFET Power MOSFET in a DirectFET M4 package rated at 68.0 amperes optimized with low on resistance. International Rectifier
3 AUIRF7648M2TR1 60V Automotive Grade Single N-Channel HEXFET Power MOSFET in a DirectFET M4 package rated at 68.0 amperes optimized with low on resistance. International Rectifier
4 BU323 10 A N-P-N monollithic darlington power transistor. 350 V. 175 W. Gain of 150 at 6 A. General Electric Solid State
5 BU323A 10 A N-P-N monollithic darlington power transistor. 400 V. 175 W. Gain of 150 at 6 A. General Electric Solid State
6 HT601-TM23/TM22P-88P CAT 6 Data Wiring System Connectors Hirose Electric
7 IRF6610TR1PBF A 20V Single N-Channel HEXFET Power MOSFET in a DirectFET SQ package rated at 66 amperes. International Rectifier
8 IRF6633A A 20V Single N-Channel HEXFET Power MOSFET in a DirectFET MP package rated at 69 amperes optimized with low on resistance. International Rectifier
9 IRF6633ATR1PBF A 20V Single N-Channel HEXFET Power MOSFET in a DirectFET MP package rated at 69 amperes optimized with low on resistance. International Rectifier
10 IRF6633ATRPBF A 20V Single N-Channel HEXFET Power MOSFET in a DirectFET MP package rated at 69 amperes optimized with low on resistance. International Rectifier
11 IRF6644TR1 Leaded A 100V Single N-Channel HEXFET Power MOSFET in a DirectFET MN package rated at 60 amperes. International Rectifier
12 IRF6644TR1PBF A 100V Single N-Channel HEXFET Power MOSFET in a DirectFET MN package rated at 60 amperes. International Rectifier
13 IRF6644TRPBF A 100V Single N-Channel HEXFET Power MOSFET in a DirectFET MN package rated at 60 amperes. International Rectifier
14 IRF6646TR1 Leaded A 80V Single N-Channel HEXFET Power MOSFET in a DirectFET MN package rated at 68 amperes. International Rectifier
15 IRF6646TR1PBF A 80V Single N-Channel HEXFET Power MOSFET in a DirectFET MN package rated at 68 amperes. International Rectifier
16 IRF6646TRPBF A 80V Single N-Channel HEXFET Power MOSFET in a DirectFET MN package rated at 68 amperes. International Rectifier
17 IRF6674 A 60V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 67 amperes optimized with low on resistance. International Rectifier
18 IRF6674TR1PBF A 60V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 67 amperes optimized with low on resistance. International Rectifier
19 IRF6674TRPBF A 60V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 67 amperes optimized with low on resistance. International Rectifier
20 IRF6718L2 A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET L6 package rated at 61 amperes optimized with low on resistance. International Rectifier
21 IRF6718L2TR1PBF A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET L6 package rated at 61 amperes optimized with low on resistance. International Rectifier
22 PB-IRF6610 Leaded A 20V Single N-Channel HEXFET Power MOSFET in a DirectFET SQ package rated at 66 amperes. International Rectifier
23 PB-IRF6644 Leaded A 100V Single N-Channel HEXFET Power MOSFET in a DirectFET MN package rated at 60 amperes. International Rectifier
24 PB-IRF6646 Leaded A 80V Single N-Channel HEXFET Power MOSFET in a DirectFET MN package rated at 68 amperes. International Rectifier
25 SSW-124 DC - 6 GHz high isolation (42dB at 2GHz, 30dB at 6GHz) GaAs MMIC SPDT switch. Stanford Microdevices
26 SSW-224 DC - 6 GHz high isolation (40dB at 2GHz, 30dB at 6GHz ) GaAs MMIC SPDT switch. Stanford Microdevices
27 TM23P-8-BT(01) CAT 6 Data Wiring System Connectors Hirose Electric
28 TM23P-8-BT(02) CAT 6 Data Wiring System Connectors Hirose Electric
29 TM23P-8-BT(03) CAT 6 Data Wiring System Connectors Hirose Electric
30 TM23P-8-BT(04) CAT 6 Data Wiring System Connectors Hirose Electric


Datasheets found :: 48
Page: | 1 | 2 |



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