No. |
Part Name |
Description |
Manufacturer |
1 |
ATAM862-8 |
Microcontroller with UHF ASK/FSK Transmitter at 868 MHz and 915 MHz, 4 KB Flash, 3 Timer, SSI, 11 I/O Lines, 64 Byte EEPROM, VDD ... |
Atmel |
2 |
ATMEGA128L |
128-Kbyte self-programming Flash Program Memory, 4-Kbyte SRAM, 4-Kbyte EEPROM, 8 Channel 10-bit A/D-converter. JTAG interface for on-chip-debug. Up to 8 MIPS throughput at 8 Mhz. 3 Volt Operation. |
Atmel |
3 |
ATMEGA162L |
16-Kbyte self-programming Flash Program Memory, 1-Kbyte SRAM, 512 Byte EEPROM, JTAG interface for on-chip-debug. Up to 8 MIPS throughput at 8 MHz. 3 Volt Operation. |
Atmel |
4 |
ATMEGA169L |
16-Kbyte self-programming Flash Program Memory, 1-Kbyte SRAM, 512 Byte EEPROM, 8 Channel 10-bit A/D-converter. JTAG interface for on-chip-debug. 4 X 25 Segment LCD Driver. Up to 8 MIPS throughput at 8 MHz. 3 Volt Operation |
Atmel |
5 |
ATMEGA16L |
16-Kbyte self-programming Flash Program Memory, 1-Kbyte SRAM, 512 Byte EEPROM, 8 Channel 10-bit A/D-converter. JTAG interface for on-chip-debug. Up to 8 MIPS throughput at 8 Mhz. 3 Volt Operation |
Atmel |
6 |
ATMEGA32L |
32-Kbyte self-programming Flash Program Memory, 2-Kbyte SRAM, 1-Kbyte EEPROM, 8 Channel 10-bit A/D-converter. JTAG interface for on-chip-debug. Up to 8 MIPS throughput at 8 MHz. 3 Volt Operation. |
Atmel |
7 |
ATMEGA64L |
64-Kbyte self-programming Flash Program Memory, 4-Kbyte SRAM, 2-Kbyte EEPROM, 8 Channel 10-bit A/D-converter. JTAG interface for on-chip-debug. Up to 8 MIPS throughput at 8 Mhz. 3 Volt Operation. |
Atmel |
8 |
ATMEGA8515L |
8-Kbyte self-programming Flash Program Memory, 544 Byte internal + up to 64 Kbyte external SRAM, 512 Byte EEPROM. Up to 8 MIPS throughput at 8 Mhz. 3 Volt Operation |
Atmel |
9 |
ATMEGA8535L |
8-Kbyte self-programming Flash Program Memory, 544 Byte SRAM, 512 Byte EEPROM, 8-channel 10-bit A/D Converter. Up to 8 MIPS throughput at 8 MHz. 3 Volt Operation |
Atmel |
10 |
ATMEGA8L |
8-Kbyte self-programming Flash Program Memory, 1-Kbyte SRAM, 512 Byte EEPROM, 6 or 8 Channel 10-bit A/D-converter. Up to 8 MIPS throughput at 8 Mhz. 3 Volt Operation |
Atmel |
11 |
ATTINY12 |
1-Kbyte In-System programmable Flash Program Memory, 32 byte SRAM, 64 Byte EEPROM, Up to 8 MIPS throughput at 8 Mhz. |
Atmel |
12 |
ATTINY26L |
2K Flash Program Memory, 160 Bytes SRAM, 128 Bytes EEPROM, 11 Channel 10-bit A/D converter. Universal Serial Interface. High Frequency PWM. Up to 8 MIPS throughput at 8 MHz. 3-volt operation |
Atmel |
13 |
DSP56F802TA80 |
16-bit digital signal processor, up to 40 MIPS operation at 80 MHz core frequency, 8K x 16-bit words program flash, 1K x 16-bit words program RAM, 2K x 16-bit words data flash, 1K x 16-bit words data RAM, 2K x 16-bit words boot flash |
Motorola |
14 |
IDT72V70800PF |
512 x 512 TSI, 4 I/O at 8Mbps, 3.3V |
IDT |
15 |
IDT72V70800PF8 |
512 x 512 TSI, 4 I/O at 8Mbps, 3.3V |
IDT |
16 |
IDT72V70800TF |
512 x 512 TSI, 4 I/O at 8Mbps, 3.3V |
IDT |
17 |
IDT72V70800TF8 |
512 x 512 TSI, 4 I/O at 8Mbps, 3.3V |
IDT |
18 |
IDT72V70810PF |
1K x 1K TSI, 8 I/O at 8Mbps, 3.3V |
IDT |
19 |
IDT72V70810PF8 |
1K x 1K TSI, 8 I/O at 8Mbps, 3.3V |
IDT |
20 |
IDT72V70810TF |
1K x 1K TSI, 8 I/O at 8Mbps, 3.3V |
IDT |
21 |
IDT72V70810TF8 |
1K x 1K TSI, 8 I/O at 8Mbps, 3.3V |
IDT |
22 |
IRF6636TR1 |
Leaded A 20V Single N-Channel HEXFET Power MOSFET in a DirectFET (ST) package rated at 81 amperes. |
International Rectifier |
23 |
IRF6636TR1PBF |
A 20V Single N-Channel HEXFET Power MOSFET in a DirectFET (ST) package rated at 81 amperes. |
International Rectifier |
24 |
IRF6636TRPBF |
A 20V Single N-Channel HEXFET Power MOSFET in a DirectFET (ST) package rated at 81 amperes. |
International Rectifier |
25 |
IRF6648 |
A 60V Single N-Channel HEXFET Power MOSFET in a DirectFET MN package rated at 86 amperes. |
International Rectifier |
26 |
IRF6648TR1 |
Leaded A 60V Single N-Channel HEXFET Power MOSFET in a DirectFET MN package rated at 86 amperes. |
International Rectifier |
27 |
IRF6648TRPBF |
A 60V Single N-Channel HEXFET Power MOSFET in a DirectFET MN package rated at 86 amperes. |
International Rectifier |
28 |
PB-IRF6636 |
Leaded A 20V Single N-Channel HEXFET Power MOSFET in a DirectFET (ST) package rated at 81 amperes. |
International Rectifier |
29 |
PB-IRF6648 |
Leaded A 60V Single N-Channel HEXFET Power MOSFET in a DirectFET MN package rated at 86 amperes. |
International Rectifier |
30 |
SGA-2386 |
DC-2800 MHz, 2.7V, silicon germanium HBT cascadeable gain block. High gain: 17.2 dB typ. at 850 MHz. |
Stanford Microdevices |
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