| No. |
Part Name |
Description |
Manufacturer |
| 1 |
IRFB18N50K |
500V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
| 2 |
NGB18N40CLB |
Ignition IGBT in D2ak (Gen3) with Improved SCIS Energy and Vce(on) |
ON Semiconductor |
| 3 |
NGB18N40CLBT4 |
Ignition IGBT in D2ak (Gen3) with Improved SCIS Energy and Vce(on) |
ON Semiconductor |
| 4 |
NTB18N06L |
Power MOSFET 15 Amps, 60 Volts, Logic Level N-Channel, D2 Pak |
ON Semiconductor |
| 5 |
NTB18N06LT4 |
Power MOSFET 15 Amps, 60 Volts, Logic Level N-Channel, D2 Pak |
ON Semiconductor |
| 6 |
NTB18N06LT4G |
Power MOSFET 15 Amps, 60 Volts, Logic Level N-Channel, D2 Pak |
ON Semiconductor |
| 7 |
PHB18NQ10T |
N-channel TrenchMOS standard level FET |
Nexperia |
| 8 |
PHB18NQ10T |
N-channel TrenchMOS standard level FET |
NXP Semiconductors |
| 9 |
PHB18NQ10T |
N-channel TrenchMOS(tm) transistor |
Philips |
| 10 |
PHB18NQ20T |
N-channel TrenchMOS(tm) transistor |
Philips |
| 11 |
STB18N20 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
SGS Thomson Microelectronics |
| 12 |
STB18N20 |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
| 13 |
STB18N20 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
ST Microelectronics |
| 14 |
STB18N55M5 |
N-channel 550 V, 0.150 Ohm typ., 16 A, MDmesh(TM) V Power MOSFET in D2PAK package |
ST Microelectronics |
| 15 |
STB18N60M2 |
N-channel 600 V, 0.255 Ohm typ., 13 A MDmesh II Plus(TM) low Qg Power MOSFET in D2PAK package |
ST Microelectronics |
| 16 |
STB18N65M5 |
N-channel 650 V, 0.198 Ohm typ., 15 A MDmesh(TM) V Power MOSFET in D2PAK package |
ST Microelectronics |
| 17 |
STB18NF25 |
N-channel 250 V, 0.14 Ohm, 17 A low gate charge STripFET(TM) II Power MOSFET in D2PAK package |
ST Microelectronics |
| 18 |
STB18NF30 |
Automotive-grade N-channel 330 V, 160 mOhm typ., 18 A STripFET(TM) II Power MOSFET in a D2PAK package |
ST Microelectronics |
| 19 |
STB18NM60ND |
N-channel 600 V, 0.25 Ohm typ., 13 A FDmesh(TM) II Power MOSFET (with fast diode) in D2PAK package |
ST Microelectronics |
| 20 |
STB18NM80 |
N-channel 800 V, 0.25 Ohm, 17 A, MDmesh(TM) Power MOSFET in D2PAK package |
ST Microelectronics |
| 21 |
STGB18N40LZ |
EAS 180 mJ - 390 V - internally clamped IGBT |
ST Microelectronics |
| 22 |
STGB18N40LZ-1 |
EAS 180 mJ - 390 V - internally clamped IGBT |
ST Microelectronics |
| 23 |
STGB18N40LZT4 |
EAS 180 mJ - 390 V - internally clamped IGBT |
ST Microelectronics |
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