| No. |
Part Name |
Description |
Manufacturer |
| 1 |
2SB810 |
PNP SILICON TRANSISTOR |
NEC |
| 2 |
2SB811 |
PNP Silicon Transistor |
NEC |
| 3 |
2SB812 |
Silicon PNP Power Transistors TO-3PN package |
Savantic |
| 4 |
2SB812-T2B |
Silicon transistor |
NEC |
| 5 |
2SB814 |
Si PNP epitaxial planar high voltage, low-noise amplifier |
Panasonic |
| 6 |
2SB815 |
PNP Epitaxial Planar Silicon Transistors General-Purpose AF Amplifier Applications |
SANYO |
| 7 |
2SB816 |
PNP Epitaxial Planar Silicon Transistors For LF Power Amplifier, 50W Output Large Power Switching Applications |
SANYO |
| 8 |
2SB816 |
Silicon PNP Power Transistors TO-3PN package |
Savantic |
| 9 |
2SB817 |
POWER TRANSISTORS(12A,140V,100W) |
MOSPEC Semiconductor |
| 10 |
2SB817 |
PNP Epitaxial Planar Silicon Transistors 140V/12A AF 60W Output Applications |
SANYO |
| 11 |
2SB817 |
Silicon PNP Power Transistors TO-3PN package |
Savantic |
| 12 |
2SB817 |
PNP PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER) |
Wing Shing Computer Components |
| 13 |
2SB817P |
General-Purpose Amplifier Transistors |
SANYO |
| 14 |
2SB819 |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
| 15 |
AN90B81 |
TRANSISTOR ARRAYS |
Panasonic |
| 16 |
AN90B81S |
TRANSISTOR ARRAYS |
Panasonic |
| 17 |
BB811 |
Silicon Variable Capacitance Diode (Frequency range up to 2 GHz; special design for use in TV-sat indoor units) |
Siemens |
| 18 |
BB814 |
Varactordiodes - Silicon variable capacitance diode for FM tuners |
Infineon |
| 19 |
BB814 |
Surface mount switching diode. |
Jinan Gude Electronic Device |
| 20 |
BB814 |
Silicon Variable Capacitance Diode (For FM radio tuners with extended frequency band High tuning ratio at low supply voltage (car radio) |
Siemens |
| 21 |
BB814 |
Dual Varicap Diode |
Vishay |
| 22 |
BB814-1 |
Small signal capacitance diode for frequency tuning in FM radio tuners |
Vishay |
| 23 |
BB814-2 |
Small signal capacitance diode for frequency tuning in FM radio tuners |
Vishay |
| 24 |
CFB810 |
60.000W Medium Power PNP Plastic Leaded Transistor. 110V Vceo, 8.000A Ic, 1000 hFE. |
Continental Device India Limited |
| 25 |
CSB810 |
2.000W Medium Power PNP Plastic Leaded Transistor. 110V Vceo, 8.000A Ic, 1000 - 20000 hFE. |
Continental Device India Limited |
| 26 |
CSB817F |
TO-3P Fully Isolated Plastic Package Transistor CDIL |
Continental Device India Limited |
| 27 |
CSB817OF |
90.000W Power PNP Plastic Leaded Transistor. 140V Vceo, 12.000A Ic, 60 - 120 hFE. |
Continental Device India Limited |
| 28 |
CSB817QF |
TO-3P Fully Isolated Plastic Package Transistor CDIL |
Continental Device India Limited |
| 29 |
CSB817YF |
TO-3P Fully Isolated Plastic Package Transistor CDIL |
Continental Device India Limited |
| 30 |
CXK5B81020J |
131072-word 8-bit High Speed Bi-CMOS Static RAM |
SONY |
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