No. |
Part Name |
Description |
Manufacturer |
1 |
2SB857 |
PNP EPITAXIAL PLANAR TRANSISTOR |
Hi-Sincerity Microelectronics |
2 |
2SB857 |
Silicon PNP Transistor |
Hitachi Semiconductor |
3 |
2SB857 |
Silicon PNP Triple Diffused |
Hitachi Semiconductor |
4 |
2SB857 |
Transistors>Amplifiers/Bipolar |
Renesas |
5 |
2SB857 |
Silicon PNP Power Transistors TO-220C package |
Savantic |
6 |
2SB857-B |
TO-220 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
7 |
2SB857-C |
TO-220 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
8 |
2SB857-D |
TO-220 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
9 |
BB857 |
Varactordiodes - Silicon tuning diode for SAT tuning units |
Infineon |
10 |
BB857 |
Silicon Tuning Diode (For SAT-indoor-units High capacitance ratio Low series inductance) |
Siemens |
11 |
CSB857 |
40.000W Low Frequency PNP Plastic Leaded Transistor. 50V Vceo, 4.000A Ic, 60 - 320 hFE. |
Continental Device India Limited |
12 |
CSB857B |
40.000W Low Frequency PNP Plastic Leaded Transistor. 50V Vceo, 4.000A Ic, 60 - 120 hFE. |
Continental Device India Limited |
13 |
CSB857C |
40.000W Low Frequency PNP Plastic Leaded Transistor. 50V Vceo, 4.000A Ic, 100 - 200 hFE. |
Continental Device India Limited |
14 |
CSB857D |
40.000W Low Frequency PNP Plastic Leaded Transistor. 50V Vceo, 4.000A Ic, 160 - 320 hFE. |
Continental Device India Limited |
15 |
FMB857B |
256Mb F-die DDR SDRAM Specification |
Samsung Electronic |
16 |
HSB857 |
PNP EPITAXIAL PLANAR TRANSISTOR |
Hi-Sincerity Microelectronics |
17 |
HSB857D |
PNP EPITAXIAL PLANAR TRANSISTOR |
Hi-Sincerity Microelectronics |
18 |
OPB857 |
Slotted optical switch |
Optek Technology |
19 |
UB857D |
Counter time circuit, 4 independent channels, maximum clock frequency 2.5 MHz, possibly equivalent Z80CTC |
RFT |
20 |
VB857D |
Couter timer circuit, 4 independent channels, max. clock frequency 2.5 MHz, extended temperature range, possibly equivalent Z80-CTC/PE |
RFT |
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