| No. |
Part Name |
Description |
Manufacturer |
| 1 |
BC328/BC338 paired |
PNP Silicon Transistor for AF driver stages as well as for universal applications |
Siemens |
| 2 |
BC338 |
0.625W General Purpose NPN Plastic Leaded Transistor. 25V Vceo, 0.800A Ic, 100 - 600 hFE |
Continental Device India Limited |
| 3 |
BC338 |
Si-Epitaxial PlanarTransistors |
Diotec Elektronische |
| 4 |
BC338 |
Switching and Amplifier Applications |
Fairchild Semiconductor |
| 5 |
BC338 |
Small Signal Transistors (NPN) |
General Semiconductor |
| 6 |
BC338 |
NPN Silicon Epitaxial Planar Transistor |
Honey Technology |
| 7 |
BC338 |
NPN Silicon AF Transistor |
Infineon |
| 8 |
BC338 |
Silicon planar-epitaxial transistor, low frequency, low power NPN |
IPRS Baneasa |
| 9 |
BC338 |
Silicon NPN Epitaxial Planar AF Transistors |
IPRS Baneasa |
| 10 |
BC338 |
Silicon NPN Epitaxial-Planar Transistor (in german) |
ITT Semiconductors |
| 11 |
BC338 |
General Purpose Transistor |
Korea Electronics (KEC) |
| 12 |
BC338 |
Low frequency transistor |
mble |
| 13 |
BC338 |
Low frequency transistor |
mble |
| 14 |
BC338 |
Low frequency transistor |
mble |
| 15 |
BC338 |
NPN SILICON AF MEDIUM POWER TRANSISTORS |
Micro Electronics |
| 16 |
BC338 |
Amplifier Transistor |
Motorola |
| 17 |
BC338 |
Silicon n-p-n medium power transistor |
Mullard |
| 18 |
BC338 |
N-P-N Silicon Planar Epitaxial Transistor |
Mullard |
| 19 |
BC338 |
NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications |
Semtech |
| 20 |
BC338 |
NPN silicon transistor, audio amplification and general purpose |
SESCOSEM |
| 21 |
BC338 |
Transistor NPN |
Siemens |
| 22 |
BC338 |
NPN Silicon Transistor for AF driver stages as well as for universal applications |
Siemens |
| 23 |
BC338 |
NPN Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage) |
Siemens |
| 24 |
BC338 |
Tranzystor ma�ej cz�stotliwo�ci ma�ej mocy |
Ultra CEMI |
| 25 |
BC338 |
Transistor. Switching and ampplifier applications. Suitable for AF-driver stagees and power output stages. Vces = 30V, Vceo= 25V, Vebo = 5V, Pc = 625mW, Ic = 800mA. |
USHA India LTD |
| 26 |
BC338 |
Small Signal Transistors (NPN) |
Vishay |
| 27 |
BC338-16 |
Si-Epitaxial PlanarTransistors |
Diotec Elektronische |
| 28 |
BC338-16 |
Small Signal Transistor (NPN) |
General Semiconductor |
| 29 |
BC338-16 |
Silicon NPN Epitaxial-Planar Transistor (in german) |
ITT Semiconductors |
| 30 |
BC338-16 |
Low frequency transistor |
mble |
| | | |
