| No. |
Part Name |
Description |
Manufacturer |
| 1 |
10BF10 |
100V 1A Ultra-Fast Discrete Diode in a SMB package |
International Rectifier |
| 2 |
10BF100 |
1000V 1A Ultra-Fast Discrete Diode in a SMB package |
International Rectifier |
| 3 |
10BF100TR |
1000V 1A Ultra-Fast Discrete Diode in a SMB package |
International Rectifier |
| 4 |
10BF10TR |
100V 1A Ultra-Fast Discrete Diode in a SMB package |
International Rectifier |
| 5 |
30BF10 |
100V 3A Ultra-Fast Discrete Diode in a SMC package |
International Rectifier |
| 6 |
30BF10TR |
100V 3A Ultra-Fast Discrete Diode in a SMC package |
International Rectifier |
| 7 |
BF1005 |
RF-MOSFET - integrated full biasing network, VDS=5V, gfs=24mS, Gp=19dB, F=1.4dB |
Infineon |
| 8 |
BF1005 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
Siemens |
| 9 |
BF1005R |
RF-MOSFET - integrated full biasing network, VDS=5V, gfs=24mS, Gps=19dB, F=1.4dB |
Infineon |
| 10 |
BF1005S |
RF-MOSFET - integrated full biasing network, VDS=5V, gfs=30mS, Gp=20dB, F=1.4dB |
Infineon |
| 11 |
BF1005S |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
Siemens |
| 12 |
BF1005SR |
RF-MOSFET - integrated full biasing network, VDS=5V, gfs=24mS, Gp=19dB, F=1.4dB |
Infineon |
| 13 |
BF1005SW |
Silicon N-Channel MOSFET Tetrode |
Infineon |
| 14 |
BF1005W |
Silicon N-Channel MOSFET Tetrode |
Infineon |
| 15 |
BF1009 |
Silicon N-Channel MOSFET Tetrode for ... |
Infineon |
| 16 |
BF1009 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9 V Integrated stabilized bias network |
Siemens |
| 17 |
BF1009S |
RF-MOSFET - integrated full biasing network, VDS=9V, gfs=30mS, Gps=22dB, F=1.4dB; Datasheet on demand |
Infineon |
| 18 |
BF1009S |
Silicon N-Channel MOSFET Tetrode for ... |
Infineon |
| 19 |
BF1009S |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9V Integrated bias network) |
Siemens |
| 20 |
BF1009SR |
RF-MOSFET - integrated full biasing network, VDS=9V, gfs=30mS, Gps=22dB, F=1.4dB; Datasheet on demand |
Infineon |
| 21 |
BF1012 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 12V Integrated stabilized bias network |
Siemens |
| 22 |
BF1012S |
Silicon N-Channel MOSFET Tetrode |
Infineon |
| 23 |
BF1012S |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
Siemens |
| 24 |
BF1012W |
SILICON N-CHANNEL MOSFET TETRODE (For low-noise, gain-controlled input stages up to 1 GHz) |
Siemens |
| 25 |
BF109 |
Silicon NPN RF transistor |
VALVO |
| 26 |
DBF10 |
Diffused Junction Silicon Diode 1.0A Single-Phase Bridge Rectifier |
SANYO |
| 27 |
DBF10C |
Single-Phase Bridge Rectifying Diodes |
SANYO |
| 28 |
DBF10G |
Single-Phase Bridge Rectifying Diodes |
SANYO |
| 29 |
FSBF10CH60B |
Motion SPM� 3 Series |
Fairchild Semiconductor |
| 30 |
FSBF10CH60BT |
Motion SPM� 3 Series |
Fairchild Semiconductor |
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