| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1.85 mm Subminiature Ceramic Filter |
1.85 mm Subminiature Ceramic Filter - Frequency range from 350 MHz to 6 GHz |
Skyworks Solutions |
| 2 |
1.85 mm Subminiature Ceramic Filter |
1.85 mm Subminiature Ceramic Filter - Frequency range from 350 MHz to 6 GHz |
Skyworks Solutions |
| 3 |
10ETS08FP |
800V 10A Std. Recovery Diode in a TO-220AC Full-Pak (2-Pin)package |
International Rectifier |
| 4 |
10ETS12FP |
1200V 10A Std. Recovery Diode in a TO-220AC Full-Pak (2-Pin)package |
International Rectifier |
| 5 |
10ETS16FP |
1600V 10A Std. Recovery Diode in a TO-220AC Full-Pak (2-Pin)package |
International Rectifier |
| 6 |
12 and 20 mm High Power Ceramic Filters |
12 and 20 mm High Power Ceramic Filters up to 100 W Continuous Wave (CW) |
Skyworks Solutions |
| 7 |
12 and 20 mm High Power Ceramic Filters |
12 and 20 mm High Power Ceramic Filters up to 100 W Continuous Wave (CW) |
Skyworks Solutions |
| 8 |
1313 |
Metallized Polyester |
Electronic Film Capacitors |
| 9 |
1N4933 |
Plastic Fast Recovery Rectifier |
Comchip Technology |
| 10 |
1N4934 |
Plastic Fast Recovery Rectifier |
Comchip Technology |
| 11 |
1N4935 |
Plastic Fast Recovery Rectifier |
Comchip Technology |
| 12 |
1N4936 |
Plastic Fast Recovery Rectifier |
Comchip Technology |
| 13 |
1N4937 |
Plastic Fast Recovery Rectifier |
Comchip Technology |
| 14 |
20ETS08FP |
800V 20A Std. Recovery Diode in a TO-220AC Full-Pak (2-Pin)package |
International Rectifier |
| 15 |
20ETS12FP |
1200V 20A Std. Recovery Diode in a TO-220AC Full-Pak (2-Pin)package |
International Rectifier |
| 16 |
20ETS16FP |
1600V 20A Std. Recovery Diode in a TO-220AC Full-Pak (2-Pin)package |
International Rectifier |
| 17 |
2SA1968LS |
Dynamic Focus Application Transistors |
SANYO |
| 18 |
2SB1117 |
Suitable for driver of solenoid or motor, or electronic flash |
NEC |
| 19 |
2SC4686 |
TRANSISTOR SILICON NPN TRIPLE DIFFUSED PLANAR TYPE. TV DYNAMIC FOCUS APPLICATIONS, HIGH VOLTAGE SWITCHING APPLICATIONS. HIGH VOLTAGE AMPLIFIER APPLICATIONS. |
TOSHIBA |
| 20 |
2SC4686A |
TRANSISTOR SILICON NPN TRIPLE DIFFUSED PLANAR TYPE. TV DYNAMIC FOCUS APPLICATIONS, HIGH VOLTAGE SWITCHING APPLICATIONS. HIGH VOLTAGE AMPLIFIER APPLICATIONS. |
TOSHIBA |
| 21 |
2SC5460 |
TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE. DYNAMIC FOCUS APPLICATIONS. HIGH VOLTAGE SWITCHING APPLICATIONS. HIGH VOLTAGE AMPLIFIER APPLICATIONS. |
TOSHIBA |
| 22 |
2SC5466 |
TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE. DYNAMIC FOCUS, HIGH VOLTAGE SWITCHING AND HIGH VOLTAGE AMPLIFIER APPLICATIONS. |
TOSHIBA |
| 23 |
2SC5563 |
TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE. DYNAMIC FOCUS APPLICATIONS. |
TOSHIBA |
| 24 |
2SD5041 |
Transistor. AF output amplifier for electronic flash unit. Collector-base voltage Vcbo = 40V. Collector-emitter voltage Vceo = 20V. Emitter-base voltage Vebo = 7V. Collector dissipation Pc(max) = 0.75W. Collector current Ic = 5A. |
USHA India LTD |
| 25 |
2SJ128 |
MOS electric field effect power transistor |
NEC |
| 26 |
2SJ128-Z |
MOS electric field effect power transistor |
NEC |
| 27 |
2SJ132 |
MOS electric field effect power transistor |
NEC |
| 28 |
2SJ132-Z |
MOS electric field effect power transistor |
NEC |
| 29 |
2SJ133 |
MOS electric field effect power transistor |
NEC |
| 30 |
2SJ133-Z |
MOS electric field effect power transistor |
NEC |
| | | |
