No. |
Part Name |
Description |
Manufacturer |
1 |
2SC3070 |
NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier Applications |
SANYO |
2 |
2SC3071 |
NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier Applications |
SANYO |
3 |
2SC3072 |
Transistor Silicon NPN Epitaxial Type (PCT process) Strobe Flash Applications Medium Power Amplifier Applications |
TOSHIBA |
4 |
2SC3073 |
SILICON NPN EPITAXIAL TYPE(PCT PROCESS) |
TOSHIBA |
5 |
2SC3074 |
Transistor Silicon NPN Epitaxial Type (PCT process) High Current Switching Applications |
TOSHIBA |
6 |
2SC3075 |
Transistor Silicon NPN Triple Diffused Type (PCT process) Switching Regulator and High Voltage Switching Applications DC-DC Converter Applications DC-AC Converter Applications |
TOSHIBA |
7 |
2SC3076 |
Transistor Silicon NPN Epitaxial Type (PCT process) Power Amplifier Applications Power Switching Applications |
TOSHIBA |
8 |
2SC3077 |
Si NPN planar. UHF amplifier, mixer. |
Panasonic |
9 |
BC307 |
0.350W General Purpose PNP Plastic Leaded Transistor. 45V Vceo, 0.100A Ic, 120 - 800 hFE |
Continental Device India Limited |
10 |
BC307 |
Switching and Amplifier Applications |
Fairchild Semiconductor |
11 |
BC307 |
Si-PLANAR EPITAXIAL-pnp TRANSISTOR |
IPRS Baneasa |
12 |
BC307 |
Silicon PNP Epitaxial-Planar Transistor (in german) |
ITT Semiconductors |
13 |
BC307 |
General Purpose Transistor |
Korea Electronics (KEC) |
14 |
BC307 |
PNP SILICON PLANAR EPITAXIAL TRANSISTORS |
Micro Electronics |
15 |
BC307 |
Amplifier Transistors(PNP) |
Motorola |
16 |
BC307 |
Silicon p-n-p low power transistor |
Mullard |
17 |
BC307 |
Trans GP BJT PNP 45V 0.1A 3-Pin TO-92 Bulk |
New Jersey Semiconductor |
18 |
BC307 |
Amplifier Transistor PNP |
ON Semiconductor |
19 |
BC307 |
PNP general purpose transistors |
Philips |
20 |
BC307 |
Transistor PNP |
Siemens |
21 |
BC307 |
PNP Silicon Transistor for AF pre- and driver stages as well as for universal application |
Siemens |
22 |
BC307 |
Tranzystor ma�ej cz�stotliwo�ci ma�ej mocy |
Ultra CEMI |
23 |
BC307 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = -50V. Collector-emitter voltage Vceo = -45V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 500mW. Collector current Ic = -100mA. |
USHA India LTD |
24 |
BC307-16 |
Trans GP BJT PNP 45V 0.1A 3-Pin TO-92 T/R |
New Jersey Semiconductor |
25 |
BC307-D |
Amplifier Transistors PNP Silicon |
ON Semiconductor |
26 |
BC307A |
1.000W General Purpose PNP Plastic Leaded Transistor. 45V Vceo, 0.100A Ic, 120 - 220 hFE |
Continental Device India Limited |
27 |
BC307A |
PNP EPITAXIAL SILICON TRANSISTOR |
Fairchild Semiconductor |
28 |
BC307A |
Si-PLANAR EPITAXIAL-pnp TRANSISTOR h21E=β=90 >40 |
IPRS Baneasa |
29 |
BC307A |
Silicon PNP Epitaxial-Planar Transistor (in german) |
ITT Semiconductors |
30 |
BC307A |
Trans GP BJT PNP 45V 0.1A 3-Pin TO-92 |
New Jersey Semiconductor |
| | | |