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Datasheets for C307

Datasheets found :: 116
Page: | 1 | 2 | 3 | 4 |
No. Part Name Description Manufacturer
1 2SC3070 NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier Applications SANYO
2 2SC3071 NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier Applications SANYO
3 2SC3072 Transistor Silicon NPN Epitaxial Type (PCT process) Strobe Flash Applications Medium Power Amplifier Applications TOSHIBA
4 2SC3073 SILICON NPN EPITAXIAL TYPE(PCT PROCESS) TOSHIBA
5 2SC3074 Transistor Silicon NPN Epitaxial Type (PCT process) High Current Switching Applications TOSHIBA
6 2SC3075 Transistor Silicon NPN Triple Diffused Type (PCT process) Switching Regulator and High Voltage Switching Applications DC-DC Converter Applications DC-AC Converter Applications TOSHIBA
7 2SC3076 Transistor Silicon NPN Epitaxial Type (PCT process) Power Amplifier Applications Power Switching Applications TOSHIBA
8 2SC3077 Si NPN planar. UHF amplifier, mixer. Panasonic
9 BC307 0.350W General Purpose PNP Plastic Leaded Transistor. 45V Vceo, 0.100A Ic, 120 - 800 hFE Continental Device India Limited
10 BC307 Switching and Amplifier Applications Fairchild Semiconductor
11 BC307 Si-PLANAR EPITAXIAL-pnp TRANSISTOR IPRS Baneasa
12 BC307 Silicon PNP Epitaxial-Planar Transistor (in german) ITT Semiconductors
13 BC307 General Purpose Transistor Korea Electronics (KEC)
14 BC307 PNP SILICON PLANAR EPITAXIAL TRANSISTORS Micro Electronics
15 BC307 Amplifier Transistors(PNP) Motorola
16 BC307 Silicon p-n-p low power transistor Mullard
17 BC307 Trans GP BJT PNP 45V 0.1A 3-Pin TO-92 Bulk New Jersey Semiconductor
18 BC307 Amplifier Transistor PNP ON Semiconductor
19 BC307 PNP general purpose transistors Philips
20 BC307 Transistor PNP Siemens
21 BC307 PNP Silicon Transistor for AF pre- and driver stages as well as for universal application Siemens
22 BC307 Tranzystor ma�ej cz�stotliwo�ci ma�ej mocy Ultra CEMI
23 BC307 Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = -50V. Collector-emitter voltage Vceo = -45V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 500mW. Collector current Ic = -100mA. USHA India LTD
24 BC307-16 Trans GP BJT PNP 45V 0.1A 3-Pin TO-92 T/R New Jersey Semiconductor
25 BC307-D Amplifier Transistors PNP Silicon ON Semiconductor
26 BC307A 1.000W General Purpose PNP Plastic Leaded Transistor. 45V Vceo, 0.100A Ic, 120 - 220 hFE Continental Device India Limited
27 BC307A PNP EPITAXIAL SILICON TRANSISTOR Fairchild Semiconductor
28 BC307A Si-PLANAR EPITAXIAL-pnp TRANSISTOR h21E=β=90 >40 IPRS Baneasa
29 BC307A Silicon PNP Epitaxial-Planar Transistor (in german) ITT Semiconductors
30 BC307A Trans GP BJT PNP 45V 0.1A 3-Pin TO-92 New Jersey Semiconductor


Datasheets found :: 116
Page: | 1 | 2 | 3 | 4 |



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