| No. |
Part Name |
Description |
Manufacturer |
| 1 |
TC59S6404 |
MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC |
TOSHIBA |
| 2 |
TC59S6404BFT |
MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC |
TOSHIBA |
| 3 |
TC59S6404BFT-10 |
MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC |
TOSHIBA |
| 4 |
TC59S6404BFT-80 |
MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC |
TOSHIBA |
| 5 |
TC59S6404BFT/BFTL-80 |
1,048,576/2,097,152/4,194,304-WORDSx4BANKSx16/8/4-BIT S SYNCHRONOUS DYNAMIC RAM |
TOSHIBA |
| 6 |
TC59S6404BFT/BFTL10 |
1,048,576/2,097,152/4,194,304-WORDSx4BANKSx16/8/4-BIT S SYNCHRONOUS DYNAMIC RAM |
TOSHIBA |
| 7 |
TC59S6404BFTL |
MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC |
TOSHIBA |
| 8 |
TC59S6404BFTL-10 |
4,194,304-words x 4BANKS x 4-BITS synchronous dynamic RAM |
TOSHIBA |
| 9 |
TC59S6404BFTL-80 |
4,194,304-words x 4BANKS x 4-BITS synchronous dynamic RAM |
TOSHIBA |
| 10 |
TC59S6408 |
MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC |
TOSHIBA |
| 11 |
TC59S6408BFT |
MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC |
TOSHIBA |
| 12 |
TC59S6408BFT-10 |
MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC |
TOSHIBA |
| 13 |
TC59S6408BFT-80 |
MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC |
TOSHIBA |
| 14 |
TC59S6408BFT-80 |
1,048,576/2,097,152/4,194,304-WORDSx4BANKSx16/8/4-BIT S SYNCHRONOUS DYNAMIC RAM |
TOSHIBA |
| 15 |
TC59S6408BFT/BFTL-80 |
1,048,576/2,097,152/4,194,304-WORDSx4BANKSx16/8/4-BIT S SYNCHRONOUS DYNAMIC RAM |
TOSHIBA |
| 16 |
TC59S6408BFT/BFTL10 |
1,048,576/2,097,152/4,194,304-WORDSx4BANKSx16/8/4-BIT S SYNCHRONOUS DYNAMIC RAM |
TOSHIBA |
| 17 |
TC59S6408BFTL |
MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC |
TOSHIBA |
| 18 |
TC59S6408BFTL-10 |
MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC |
TOSHIBA |
| 19 |
TC59S6408BFTL-80 |
MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC |
TOSHIBA |
| 20 |
TC59S6416 |
1,048,576/2,097,152/4,194,304-WORDSx4BANKSx16/8/4-BIT S SYNCHRONOUS DYNAMIC RAM |
TOSHIBA |
| 21 |
TC59S6416-10 |
MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC |
TOSHIBA |
| 22 |
TC59S6416-80 |
MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC |
TOSHIBA |
| 23 |
TC59S6416BFT |
MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC |
TOSHIBA |
| 24 |
TC59S6416BFT-10 |
1,048,576-words x 4BANKS x 16-BITS synchronous dynamic RAM |
TOSHIBA |
| 25 |
TC59S6416BFT-80 |
MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC |
TOSHIBA |
| 26 |
TC59S6416BFT/BFTL-80 |
1,048,576/2,097,152/4,194,304-WORDSx4BANKSx16/8/4-BIT S SYNCHRONOUS DYNAMIC RAM |
TOSHIBA |
| 27 |
TC59S6416BFT/BFTL10 |
1,048,576/2,097,152/4,194,304-WORDSx4BANKSx16/8/4-BIT S SYNCHRONOUS DYNAMIC RAM |
TOSHIBA |
| 28 |
TC59S6416BFTL |
MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC |
TOSHIBA |
| 29 |
TC59S6416BFTL-10 |
1,048,576-words x 4BANKS x 16-BITS synchronous dynamic RAM |
TOSHIBA |
| 30 |
TC59S6416BFTL-80 |
1,048,576-words x 4BANKS x 16-BITS synchronous dynamic RAM |
TOSHIBA |
| | | |
