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Datasheets for CJ-6

Datasheets found :: 44
Page: | 1 | 2 |
No. Part Name Description Manufacturer
1 GM71C17400CJ-6 4,194,304 words x 4 bit CMOS dynamic RAM, 60ns Hynix Semiconductor
2 GM71C17403CJ-6 CMOS DRAM 4,194,304 words x 4 bit, 5.0V, 60ns Hynix Semiconductor
3 GM71C17800CJ-6 CMOS DRAM 2,097,152 words x 8 bit, 5.0V, 60ns Hynix Semiconductor
4 GM71C18163CJ-6 1,048,576 words x 16 bit CMOS DRAM, 60ns Hynix Semiconductor
5 GM71CS17400CJ-6 4,194,304 words x 4 bit CMOS dynamic RAM, 60ns Hynix Semiconductor
6 GM71CS17403CJ-6 CMOS DRAM 4,194,304 words x 4 bit, 5.0V, 60ns Hynix Semiconductor
7 GM71CS17800CJ-6 CMOS DRAM 2,097,152 words x 8 bit, 5.0V, 60ns Hynix Semiconductor
8 GM71V17403CJ-6 CMOS DRAM 4,194,304 words x 4 bit, 3.3V, 60ns Hynix Semiconductor
9 GM71V18163CJ-6 1M words x 16 bit CMOS dynamic RAM, 3.3V, 60ns Hynix Semiconductor
10 GM71VS17403CJ-6 CMOS DRAM 4,194,304 words x 4 bit, 3.3V, 60ns Hynix Semiconductor
11 GM71VS18163CJ-6 1M words x 16 bit CMOS dynamic RAM, 3.3V, 60ns Hynix Semiconductor
12 HM514260CJ-6 60ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory Hitachi Semiconductor
13 HM514260CJ-6R 60ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory Hitachi Semiconductor
14 HM514800CJ-6 60ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory Hitachi Semiconductor
15 HM51S4260CJ-6 60ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory Hitachi Semiconductor
16 HM51S4260CJ-6R 60ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory Hitachi Semiconductor
17 HM51S4800CJ-6 60ns; V(cc): -1 to +7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory Hitachi Semiconductor
18 KM416C1000CJ-6 1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 60ns Samsung Electronic
19 KM416C1004CJ-6 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=64ms Samsung Electronic
20 KM416C1200CJ-6 1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 60ns Samsung Electronic
21 KM416C1204CJ-6 5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns Samsung Electronic
22 KM416C1204CJ-60 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=16ms Samsung Electronic
23 KM416V1000CJ-6 1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns Samsung Electronic
24 KM416V1004CJ-6 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 60ns Samsung Electronic
25 KM416V1004CJ-60 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=3.3V, refresh period=64ms Samsung Electronic
26 KM416V1200CJ-6 1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns Samsung Electronic
27 KM416V1204CJ-6 3.3V, 1M x 16 bit CMOS DRAM with extended data out, 60ns Samsung Electronic
28 KM416V1204CJ-60 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=3.3V, refresh period=16ms Samsung Electronic
29 M5M417400CJ-6 FAST PAGE MODE 16777216-BIT (4194304-WORD BY 4-BIT) DYNAMIC RAM Mitsubishi Electric Corporation
30 M5M417400CJ-6S FAST PAGE MODE 16777216-BIT (4194304-WORD BY 4-BIT) DYNAMIC RAM Mitsubishi Electric Corporation


Datasheets found :: 44
Page: | 1 | 2 |



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