| No. |
Part Name |
Description |
Manufacturer |
| 1 |
BCM6020 |
Scalable DSL Transceiver |
Broadcom |
| 2 |
CM600DU-24F |
IGBT Modules:1200V |
Mitsubishi Electric Corporation |
| 3 |
CM600DU-24F |
Dual IGBTMOD 600 Amperes/1200 Volts |
Powerex Power Semiconductors |
| 4 |
CM600DU-24NF |
HIGH POWER SWITCHING USE |
Mitsubishi Electric Corporation |
| 5 |
CM600DU-5F |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 6 |
CM600DU-5F |
Dual IGBTMOD 600 Amperes/1200 Volts |
Powerex Power Semiconductors |
| 7 |
CM600DY-12NF |
HIGH POWER SWITCHING USE |
Mitsubishi Electric Corporation |
| 8 |
CM600DY-24A |
HIGH POWER SWITCHING USE |
Mitsubishi Electric Corporation |
| 9 |
CM600DY-34H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules |
Mitsubishi Electric Corporation |
| 10 |
CM600DY-34H |
HIGH POWER SWITCHING USE INSULATED TYPE |
Powerex Power Semiconductors |
| 11 |
CM600E2Y-34H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules |
Mitsubishi Electric Corporation |
| 12 |
CM600E2Y-34H |
HIGH POWER SWITCHING USE INSULATED TYPE |
Powerex Power Semiconductors |
| 13 |
CM600HA-12H |
IGBT Modules: 600V |
Mitsubishi Electric Corporation |
| 14 |
CM600HA-12H |
IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 15 |
CM600HA-12H |
Single IGBTMOD 600 Amperes/600 Volts |
Powerex Power Semiconductors |
| 16 |
CM600HA-24H |
IGBT Modules:1200V |
Mitsubishi Electric Corporation |
| 17 |
CM600HA-24H |
IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 18 |
CM600HA-24H |
Single IGBTMOD 600 Amperes/1200 Volts |
Powerex Power Semiconductors |
| 19 |
CM600HA-28H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules |
Mitsubishi Electric Corporation |
| 20 |
CM600HA-28H |
IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 21 |
CM600HA-28H |
Single IGBTMOD 600 Amperes/1400 Volts |
Powerex Power Semiconductors |
| 22 |
CM600HA-5F |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 23 |
CM600HA-5F |
MITSUBISHI IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 24 |
CM600HA-5F |
Trench Gate Design Single IGBTMOD�� 600 Amperes/250 Volts |
Powerex Power Semiconductors |
| 25 |
CM600HA24H |
Single IGBTMOD H-Series Module 600 Amperes/1200 Volts |
Powerex Power Semiconductors |
| 26 |
CM600HB-90H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules |
Mitsubishi Electric Corporation |
| 27 |
CM600HB-90H |
Single IGBTMOD�� HVIGBT 600 Amperes/4500 Volts |
Powerex Power Semiconductors |
| 28 |
CM600HN-5F |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 29 |
CM600HU-12F |
MITSUBISHI IGBT MODULES HIGH POWER SWITCHING USE |
Mitsubishi Electric Corporation |
| 30 |
CM600HU-12F |
IGBT Modules: 600V |
Mitsubishi Electric Corporation |
| | | |
