| No. |
Part Name |
Description |
Manufacturer |
| 1 |
ILX146K |
The Industrys First Digital Copier CCD Linear Sensor with RGB Adjacent 3-Line Plus Monochrome 1-Line 7600-Pixel Sensors |
etc |
| 2 |
K1010A |
Photocoupler, CTR 80 to 160%. for registers, copiers, automatic vending machines, communications, telephone, etc |
Cosmo Electronics |
| 3 |
K1010B |
Photocoupler, CTR 130 to 260%. for registers, copiers, automatic vending machines, communications, telephone, etc |
Cosmo Electronics |
| 4 |
K1010C |
Photocoupler, CTR 200 to 400%. for registers, copiers, automatic vending machines, communications, telephone, etc |
Cosmo Electronics |
| 5 |
K1010D |
Photocoupler, CTR 300 to 600%. for registers, copiers, automatic vending machines, communications, telephone, etc |
Cosmo Electronics |
| 6 |
K1010E |
Photocoupler, CTR 50 to 600%. for registers, copiers, automatic vending machines, communications, telephone, etc |
Cosmo Electronics |
| 7 |
LC82101 |
Image Processing Circuit for FAX, Copier, and OCR Products |
SANYO |
| 8 |
LC82102 |
Image-Processing LSI for Fax, Copier and OCR Products |
SANYO |
| 9 |
LC82102W |
Image-Processing LSI for Fax, Copier and OCR Products |
SANYO |
| 10 |
LC82103 |
Image-Processing LSI for Facsimile, Copier, and OCR Applications |
SANYO |
| 11 |
LC821031 |
Image-Processing IC for Facsimile, Copier, and OCR Products |
SANYO |
| 12 |
LC8211 |
Halftone Processing IC for Fax, Copier and Scanner |
SANYO |
| 13 |
LM98714 |
3 Ch 16-Bit 45 MSPS Digital Copier AFE w/ Integrated CCD/CIS Sensor Timing Generator & LVDS Output |
Texas Instruments |
| 14 |
LM98714BCMT/NOPB |
3 Ch 16-Bit 45 MSPS Digital Copier AFE w/ Integrated CCD/CIS Sensor Timing Generator & LVDS Output 48-TSSOP 0 to 70 |
Texas Instruments |
| 15 |
LM98714BCMTX/NOPB |
3 Ch 16-Bit 45 MSPS Digital Copier AFE w/ Integrated CCD/CIS Sensor Timing Generator & LVDS Output 48-TSSOP 0 to 70 |
Texas Instruments |
| 16 |
LM98714CCMT/NOPB |
3 Ch 16-Bit 45 MSPS Digital Copier AFE w/ Integrated CCD/CIS Sensor Timing Generator & LVDS Output 48-TSSOP 0 to 70 |
Texas Instruments |
| 17 |
LM98714CCMTX |
3 Ch 16-Bit 45 MSPS Digital Copier AFE w/ Integrated CCD/CIS Sensor Timing Generator & LVDS Output 48-TSSOP 0 to 70 |
Texas Instruments |
| 18 |
LM98714CCMTX/NOPB |
3 Ch 16-Bit 45 MSPS Digital Copier AFE w/ Integrated CCD/CIS Sensor Timing Generator & LVDS Output 48-TSSOP 0 to 70 |
Texas Instruments |
| 19 |
TLP1217 |
COPIER/ LASER BEAM PRINTER FACSIMILE/ PRINTER/ ELECTRONIC TYPEWRITER |
TOSHIBA |
| 20 |
VSP5000 |
2CH, 12-Bit 30 Msps CCD Signal Processor for Copier |
Texas Instruments |
| 21 |
VSP5000PM |
2CH, 12-Bit 30 Msps CCD Signal Processor for Copier |
Texas Instruments |
| 22 |
VSP5000PMR |
2CH, 12-Bit 30 Msps CCD Signal Processor for Copier |
Texas Instruments |
| 23 |
VSP5000Y |
2CH, 12-Bit 30 Msps CCD Signal Processor for Copier |
Texas Instruments |
| 24 |
W4NRD8C-U000 |
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 25 |
W4NXD8C-0000 |
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 26 |
W4NXD8C-L000 |
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 27 |
W4NXD8C-S000 |
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 28 |
W4NXD8D-0000 |
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 29 |
W4NXD8D-S000 |
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 30 |
W4NXD8G-0000 |
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
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