No. |
Part Name |
Description |
Manufacturer |
1 |
100304 |
Low Power Quint AND/NAND Gate |
Fairchild Semiconductor |
2 |
100304 |
Low Power Quint AND/NAND Gate |
National Semiconductor |
3 |
100304D |
Low Power Quint AND/NAND Gate |
National Semiconductor |
4 |
100304DC |
Low Power Quint AND/NAND Gate |
Fairchild Semiconductor |
5 |
100304F |
Low Power Quint AND/NAND Gate |
National Semiconductor |
6 |
100304MW8 |
Low Power Quint AND/NAND Gate |
National Semiconductor |
7 |
100304PC |
Low Power Quint AND/NAND Gate |
Fairchild Semiconductor |
8 |
100304QC |
Low Power Quint AND/NAND Gate |
Fairchild Semiconductor |
9 |
100304QCX |
Low Power Quint AND/NAND Gate |
Fairchild Semiconductor |
10 |
100304QI |
Low Power Quint AND/NAND Gate |
Fairchild Semiconductor |
11 |
100304QIX |
Low Power Quint AND/NAND Gate |
Fairchild Semiconductor |
12 |
1MB12-140 |
INSULATED GATE BIPOLAR TRANSISTOR |
Fuji Electric |
13 |
1MBH60-100 |
INSULATED GATE BIPOLAR TRANSISTOR |
Fuji Electric |
14 |
1MBH60D-090A |
IGBT INSULATED GATE BIPOLAR TRANSISTOR |
Fuji Electric |
15 |
1P1G08MDBVREPG4 |
Enhanced Product Single 2-Input Positive-And Gate 5-SOT-23 -55 to 125 |
Texas Instruments |
16 |
2PG301 |
Insulated Gate Bipolar Transistor |
Panasonic |
17 |
2PG302 |
For Insulated Gate Bipolar Transistor |
Panasonic |
18 |
2PG303 |
Insulated Gate Bipolar Transistor |
Panasonic |
19 |
2PG304 |
Insulated Gate Bipolar Transistor |
Panasonic |
20 |
2PG351 |
Insulated Gate Bipolar Transistor |
Panasonic |
21 |
2PG352 |
Insulated Gate Bipolar Transistor |
Panasonic |
22 |
2PG353 |
Insulated Gate Bipolar Transistor |
Panasonic |
23 |
2PG401 |
Insulated Gate Bipolar Transistor |
Panasonic |
24 |
2PG402 |
Insulated Gate Bipolar Transistor |
Panasonic |
25 |
3N140 |
Silicon n channel field effect transistor dual insulated GATE FET (Tetrode MOST), |
Mullard |
26 |
3N141 |
Silicon n channel field effect transistor, dual insulated GATE FET (Tetrode MOST) |
Mullard |
27 |
3N142 |
SILICON INSULATED GATE FIELD EFFECT TRANSISTOR |
General Electric Solid State |
28 |
3N153 |
SILICON INSULATED GATE FIELD EFFECT TRANSISTOR |
General Electric Solid State |
29 |
3N187 |
MOS Field-Effect Transistor N-Channel Depletion Type with integrated gate-protection circuit, up to 300MHz |
RCA Solid State |
30 |
4011B |
Quadruple 2-input NAND gate |
Philips |
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