| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1S1314 |
Silicon planar diode, communication and industrial applications, Low-Level Modulation |
TOSHIBA |
| 2 |
2N1011 |
PNP germanium power transistor, for military and industrial equipment |
Motorola |
| 3 |
2N1120 |
PNP Germanium power transistor for military and industrial power applications |
Motorola |
| 4 |
2N1412 |
PNP germanium power transistor for high-voltage in military and industrial equipment |
Motorola |
| 5 |
2N1412A |
PNP germanium power transistor for high-voltage in military and industrial equipment |
Motorola |
| 6 |
2N1708 |
NPN Silicon transistor designed for very high-speed, low-power saturated switching applications for computers in military and industrial service |
Motorola |
| 7 |
2N297A |
PNP germanium power transistor for military and industrial power switching and amplifier applications |
Motorola |
| 8 |
2N3866 |
NPN silicon transistor, designed for amplifier, frequency-multiplier, or oscillator applications in military and industrial equipment |
Motorola |
| 9 |
2N3948 |
NPN silicon RF power transistor, ideal for CATV applications or military and industrial equipment |
Motorola |
| 10 |
2N3980 |
Silicon annular PN unijunction transistor designed for military and industrial use in pulse, timing, sensing, and oscillator circuits |
Motorola |
| 11 |
2N4948 |
Silicon annular unijunction transistor designed for military and industrial use |
Motorola |
| 12 |
2N4949 |
Silicon annular unijunction transistor designed for military and industrial use |
Motorola |
| 13 |
2N5160 |
PNP silicon RF power transistor for military and industrial equipment |
Motorola |
| 14 |
2N5161 |
PNP silicon RF power transistor for use in military and industrial equipment |
Motorola |
| 15 |
2N5162 |
PNP silicon RF power transistor for use in military and industrial equipment |
Motorola |
| 16 |
2N5324 |
PNP germanium power transistor designed for switching, inverter, TV deflection and industrial power supply applications |
Motorola |
| 17 |
2N5325 |
PNP germanium power transistor designed for switching, inverter, TV deflection and industrial power supply applications |
Motorola |
| 18 |
2N665 |
PNP germanium power transistor in military and industrial equipment |
Motorola |
| 19 |
3N200 |
MOS Field-Effect Transistor N-Channel Depletion Type, for Military and Industrial Applications up to 500MHz |
RCA Solid State |
| 20 |
5962-9960602QUA |
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class Q. Extended industrial temp. Lead finish hot solder dipped. Total dose none. |
Aeroflex Circuit Technology |
| 21 |
5962-9960602QUC |
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class Q. Extended industrial temp. Lead finish gold. Total dose none. |
Aeroflex Circuit Technology |
| 22 |
5962-9960602QUX |
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class Q. Extended industrial temp. Lead finish factory option. Total dose none. |
Aeroflex Circuit Technology |
| 23 |
5962-9960602TUA |
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Extended industrial temp. Lead finish hot solder dipped. Total dose none. |
Aeroflex Circuit Technology |
| 24 |
5962-9960602TUC |
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Extended industrial temp. Lead finish gold. Total dose none. |
Aeroflex Circuit Technology |
| 25 |
5962-9960602TUX |
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Extended industrial temp. Lead finish factory option. Total dose none. |
Aeroflex Circuit Technology |
| 26 |
5962D9960602QUA |
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class Q. Extended industrial temp. Lead finish hot solder dipped. Total dose 1E4 (10krad(Si)). |
Aeroflex Circuit Technology |
| 27 |
5962D9960602QUC |
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class Q. Extended industrial temp. Lead finish gold. Total dose 1E4 (10krad(Si)). |
Aeroflex Circuit Technology |
| 28 |
5962D9960602QUX |
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class Q. Extended industrial temp. Lead finish factory option. Total dose 1E4 (10krad(Si)). |
Aeroflex Circuit Technology |
| 29 |
5962D9960602TUA |
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Extended industrial temp. Lead finish hot solder dipped. Total dose 1E4 (10krad(Si)). |
Aeroflex Circuit Technology |
| 30 |
5962D9960602TUC |
512K x 8 SRAM: SMD. 100ns access time, 5V operation. QML class T. Extended industrial temp. Lead finish gold. Total dose 1E4 (10krad(Si)). |
Aeroflex Circuit Technology |
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