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Datasheets for DGR

Datasheets found :: 7
Page: | 1 |
No. Part Name Description Manufacturer
1 2SK1117 V(dss): 600V; V(dgr): 600V; V(gss): +-20V; I(d): 6A; P(d): 100W; n-MOS II TOSHIBA
2 LM8325DGR8-1/NOPB Mobile I/O Companion Supporting Keyscan, I/O Expansion, PWM, and ACCESS.bus Host Interface 25-csBGA Texas Instruments
3 LM8325DGR8X-1/NOPB Mobile I/O Companion Supporting Keyscan, I/O Expansion, PWM, and ACCESS.bus Host Interface 25-csBGA Texas Instruments
4 S2370 V(dsx): 60V; V(dgr): 60V; V(gss): +-20V; 40A; 125W; field effect transistor. For high speed high current switching applications, chopper regular, DC-DC converter and motor drive applications TOSHIBA
5 TSD4M150F V(ds): 100V; V(dgr): 100V; V(gs): +-20V; 500W; I(d): 135A; N-channel enhancement mode ISOFET power MOS transistor module. For DC-DC & DC-AC converters, SMPS & UPS, motor control, output storage for PWM, ultrasonic circuits SGS Thomson Microelectronics
6 TSD4M150V V(ds): 100V; V(dgr): 100V; V(gs): +-20V; 500W; I(d): 135A; N-channel enhancement mode ISOFET power MOS transistor module. For DC-DC & DC-AC converters, SMPS & UPS, motor control, output storage for PWM, ultrasonic circuits SGS Thomson Microelectronics
7 YTFP250 V(dsx): 200V; V(dgr): 200V; V(gss): 20V; 150W; silicon N-channel MOS type field effect effect transistor. For high speed, high current switching applications TOSHIBA

Datasheets found :: 7
Page: | 1 |



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