| No. |
Part Name |
Description |
Manufacturer |
| 1 |
28LV256JC-5 |
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns. |
Turbo IC |
| 2 |
28LV256JI-5 |
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns. |
Turbo IC |
| 3 |
28LV256JM-5 |
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns. |
Turbo IC |
| 4 |
28LV256PC-5 |
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns. |
Turbo IC |
| 5 |
28LV256PI-5 |
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns. |
Turbo IC |
| 6 |
28LV256PM-5 |
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns. |
Turbo IC |
| 7 |
28LV256SC-5 |
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns. |
Turbo IC |
| 8 |
28LV256SI-5 |
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns. |
Turbo IC |
| 9 |
28LV256SM-5 |
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns. |
Turbo IC |
| 10 |
28LV256TC-5 |
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns. |
Turbo IC |
| 11 |
28LV256TI-5 |
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns. |
Turbo IC |
| 12 |
28LV256TM-5 |
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns. |
Turbo IC |
| 13 |
2N6072 |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 300 V. |
Motorola |
| 14 |
2N6072A |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 300 V. |
Motorola |
| 15 |
2N6072B |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 300 V. |
Motorola |
| 16 |
3EZ300D1 |
3 watt Surmetic 30 silicon zener diode. Nom zener voltage 300 V. 1% tolerance. |
Motorola |
| 17 |
3EZ300D10 |
3 watt Surmetic 30 silicon zener diode. Nom zener voltage 300 V. 10% tolerance. |
Motorola |
| 18 |
3EZ300D2 |
3 watt Surmetic 30 silicon zener diode. Nom zener voltage 300 V. 2% tolerance. |
Motorola |
| 19 |
3EZ300D5 |
3 watt Surmetic 30 silicon zener diode. Nom zener voltage 300 V. |
Motorola |
| 20 |
ADP5023 |
Dual 3 MHz, 800 mA Buck Regulator with One 300 mA LDO |
Analog Devices |
| 21 |
ADP5024 |
Dual 3 MHz, 1200 mA Buck Regulators with One 300 mA LDO |
Analog Devices |
| 22 |
BYT28 SERIES |
Dual Ultrafast Soft Recovery Rectifier, Reverse Recovery Time 35ns, Forward Current 10A, Reverse Voltage 300 to 400V |
Vishay |
| 23 |
BYT28B SERIES |
Dual Ultrafast Soft Recovery Rectifier, Reverse Recovery Time 35ns, Forward Current 10A, Reverse Voltage 300 to 400V |
Vishay |
| 24 |
BYT28F SERIES |
Dual Ultrafast Soft Recovery Rectifier, Reverse Recovery Time 35ns, Forward Current 10A, Reverse Voltage 300 to 400V |
Vishay |
| 25 |
BYV29 SERIES |
Ultrafast Rectifier, Reverse Voltage 300 to 400V, Forward Current 8.0A, Reverse Recovery Time 35ns |
Vishay |
| 26 |
BYV29B SERIES |
Ultrafast Rectifier, Reverse Voltage 300 to 400V, Forward Current 8.0A, Reverse Recovery Time 35ns |
Vishay |
| 27 |
BYV29F SERIES |
Ultrafast Rectifier, Reverse Voltage 300 to 400V, Forward Current 8.0A, Reverse Recovery Time 35ns |
Vishay |
| 28 |
CM300DU-12H |
Dual IGBTMOD�� U-Series Module 300 Amperes/600 Volts |
Powerex Power Semiconductors |
| 29 |
CS641230 |
Fast Recovery Single Diode Module 300 Amperes/1200 Volts |
Powerex Power Semiconductors |
| 30 |
ES2F |
Surface Mount Ultrafast Plastic Rectifier, Forward Current 2.0 A, Reverse Recovery Time 35 ns, Reverse Voltage 300 to 400 V |
Vishay |
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