| No. |
Part Name |
Description |
Manufacturer |
| 1 |
BD45E475G-M |
Voltage Detector with Fixed Delay Time |
ROHM |
| 2 |
BD45E475G-MTR |
Voltage Detector with Fixed Delay Time |
ROHM |
| 3 |
BD46E475G-M |
Voltage Detector with Fixed Delay Time |
ROHM |
| 4 |
BD46E475G-MTR |
Voltage Detector with Fixed Delay Time |
ROHM |
| 5 |
DE475-102N20A |
RF Power MOSFET |
Directed Energy |
| 6 |
DE475-102N20A |
RF power MOSFET |
IXYS |
| 7 |
DE475-102N21A |
RF Power MOSFET |
Directed Energy |
| 8 |
DE475-102N21A |
RF power MOSFET |
IXYS |
| 9 |
DE475-501N44A |
RF Power MOSFET |
Directed Energy |
| 10 |
DE475-501N44A |
RF power MOSFET |
IXYS |
| 11 |
EECHZ0E475 |
Electric Double Layer Capacitors (Wound Type) - HZ |
Panasonic |
| 12 |
NTE475 |
Silicon NPN Transistor RF Power Output |
NTE Electronics |
| 13 |
SVHC1E475M |
SURFACE MOUNT RESIN MOLDED TANTALUM CHIP CAPACITORS HIGH RELIABILITY |
NEC |
| 14 |
SVSP0E475M |
Surface mount resin molded, Ultra miniaturized chip |
NEC |
| 15 |
TCA1E475M8R |
Tantalum Capacitors (Standard) |
ROHM |
| 16 |
TCTAL1E475M8R |
Tantalum Capacitors (Bottom surface electrode : Large capacitance) |
ROHM |
| 17 |
TCTAS1E475M8R |
Tantalum Capacitors (Bottom surface electrode : Large capacitance) |
ROHM |
| | | |
