No. |
Part Name |
Description |
Manufacturer |
1 |
10910 |
3 LINES EMI FILTER INCLUDING ESD PROTECTION |
ST Microelectronics |
2 |
12BH7-A |
The 12BH7-A is a miniature medium-mu twin troide designed primarily for use as a vertical-deflection amplifier in television receivers |
General Semiconductor |
3 |
1N746 |
500 mW silicon linear diode. Max zener impedance 28.0 Ohm, max zener voltage 3.3 V (Iz 20mA). |
Fairchild Semiconductor |
4 |
1N747 |
500 mW silicon linear diode. Max zener impedance 24.0 Ohm, max zener voltage 3.6 V (Iz 20mA). |
Fairchild Semiconductor |
5 |
1N748 |
500 mW silicon linear diode. Max zener impedance 23.0 Ohm, max zener voltage 3.9 V (Iz 20mA). |
Fairchild Semiconductor |
6 |
1N749 |
500 mW silicon linear diode. Max zener impedance 22.0 Ohm, max zener voltage 4.3 V (Iz 20mA). |
Fairchild Semiconductor |
7 |
1N750 |
500 mW silicon linear diode. Max zener impedance 19.0 Ohm, max zener voltage 4.7 V (Iz 20mA). |
Fairchild Semiconductor |
8 |
1N751 |
500 mW silicon linear diode. Max zener impedance 17.0 Ohm, max zener voltage 5.1 V (Iz 20mA). |
Fairchild Semiconductor |
9 |
1N752 |
500 mW silicon linear diode. Max zener impedance 11.0 Ohm, max zener voltage 5.6 V (Iz 20mA). |
Fairchild Semiconductor |
10 |
1N753 |
500 mW silicon linear diode. Max zener impedance 7.0 Ohm, max zener voltage 6.2 V (Iz 20mA). |
Fairchild Semiconductor |
11 |
1N754 |
500 mW silicon linear diode. Max zener impedance 5.0 Ohm, max zener voltage 6.8 V (Iz 20mA). |
Fairchild Semiconductor |
12 |
1N755 |
500 mW silicon linear diode. Max zener impedance 6.0 Ohm, max zener voltage 7.5 V (Iz 20mA). |
Fairchild Semiconductor |
13 |
1N756 |
500 mW silicon linear diode. Max zener impedance 8.0 Ohm, max zener voltage 8.2 V (Iz 20mA). |
Fairchild Semiconductor |
14 |
1N757 |
500 mW silicon linear diode. Max zener impedance 10.0 Ohm, max zener voltage 9.1 V (Iz 20mA). |
Fairchild Semiconductor |
15 |
1N758 |
500 mW silicon linear diode. Max zener impedance 17.0 Ohm, max zener voltage 10.0 V (Iz 20mA). |
Fairchild Semiconductor |
16 |
1N759 |
500 mW silicon linear diode. Max zener impedance 30.0 Ohm, max zener voltage 12.0 V (Iz 20mA). |
Fairchild Semiconductor |
17 |
1P1G14MDBVREPG4 |
Enhanced Product Single Schmitt-Trigger Inverter 5-SOT-23 -55 to 125 |
Texas Instruments |
18 |
24AA02 |
The 24AA02 is a 1K bit Electrically Erasable PROM memory organized as a single block of 256 x 8-bit memory with an I2C compatible 2-wire serial interface bus. The 24AA02 features hardware write protect, Schmitt trigger inp |
Microchip |
19 |
24LC01B |
The 24LC01B is a 1K bit Electrically Erasable PROM memory organized as a single block of 128 x 8-bit memory with an I2C™ compatible 2-wire serial interface bus. The 24LC01B features hardware write protect, Schmitt trigger inputs, 400 |
Microchip |
20 |
24LC16B |
The 24LC16B is a 16K bit Electrically Erasable PROM memory organized as eight blocks of 256 x 8-bit memory with an I2C compatible 2-wire serial interface bus. The 24LC16B features hardware write protect, Schmitt trigger in |
Microchip |
21 |
2EL2 |
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS |
Power Innovations |
22 |
2EL3 |
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS |
Power Innovations |
23 |
2EL4 |
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS |
Power Innovations |
24 |
2N1595 |
Industrial-type, low-current silicon controlled rectifier in a three-lead package 1.6A |
Motorola |
25 |
2N1596 |
Industrial-type, low-current silicon controlled rectifier in a three-lead package 1.6A |
Motorola |
26 |
2N1597 |
Industrial-type, low-current silicon controlled rectifier in a three-lead package 1.6A |
Motorola |
27 |
2N1598 |
Industrial-type, low-current silicon controlled rectifier in a three-lead package 1.6A |
Motorola |
28 |
2N1599 |
Industrial-type, low-current silicon controlled rectifier in a three-lead package 1.6A |
Motorola |
29 |
2N1842 |
Industrial-type, silicon controlled rectifier in a stud package 16A |
Motorola |
30 |
2N1842A |
Industrial-type, silicon controlled rectifier in a stud package 16A |
Motorola |
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