DatasheetCatalog
  |   Home   |   All manufacturers   |   By Category   |  
FR DE ES IT PT RU

   
Quick jump to: 1N 2N 2SA 2SC 74 AD BA BC BD BF BU CXA HCF IRF KA KIA LA LM MC NE ST STK TDA TL UA
LM317 LM339 MAX232 NE555 LM324 8051 7805 2N3055 LM358 2N2222 74LS138 TDA7294 TL431 IRF540 1N4148

Datasheets for ER ME

Datasheets found :: 298
Page: | 1 | 2 | 3 | 4 | 5 |
No. Part Name Description Manufacturer
1 1S77H Germanium Gold Bond Diode, intended for use in High Transfer Medium Speed Switching Hitachi Semiconductor
2 1S78H Germanium Gold Bond Diode, intended for use in High Transfer Medium Speed Switching Hitachi Semiconductor
3 1S79H Germanium Gold Bond Diode, intended for use in High Transfer Medium Speed Switching Hitachi Semiconductor
4 2SA708 LOW FREQUENCY AMPLIFIER MEDIUM SPEED SWITCHING USHA India LTD
5 2SA708 LOW FREQUENCY AMPLIFIER MEDIUM SPEED SWITCHING USHA India LTD
6 2SB1116 Audio frequency power amplifier medium speed switching. Collector-base voltage: Vcbo = -60V. Collector-emitter voltage: Vceo = -50V. Emitter-base voltage Vebo = -6V. Collector dissipation: Pc(max) = 0,75W. USHA India LTD
7 2SB1116A Audio frequency power amplifier medium speed switching. Collector-base voltage Vcbo = -80V. Collector-emitter voltage Vceo = -60V. Emitter-base voltage Vebo = -6V. Collector dissipation Pc(max) = 0,75W. USHA India LTD
8 2SC1008 Low frequency amplifier medium speed switching. Collector-base voltage Vcbo = 80V. Collector-emitter voltage Vceo = 60V. Emitter-base voltage Vebo = 8V. Collector dissipation Pc(max) = 800mW. Collector current Ic = 700mA. USHA India LTD
9 2SC1707 LOW FREQUENCY AMPLIFIER MEDIUM SPEED SWITCHING Hitachi Semiconductor
10 2SC1707A LOW FREQUENCY AMPLIFIER MEDIUM SPEED SWITCHING Hitachi Semiconductor
11 2SC1707AH LOW FREQUENCY AMPLIFIER MEDIUM SPEED SWITCHING Hitachi Semiconductor
12 2SC1781 HIGH FREQUENCY AMPLIFIER MEDIUM SPEED SWITCHING Hitachi Semiconductor
13 2SC1781H HIGH FREQUENCY AMPLIFIER MEDIUM SPEED SWITCHING Hitachi Semiconductor
14 2SD1616A Transistor. Audio frequency power amplifier medium speed switching. Collector-base voltage Vcbo = 120V. Collector-emitter voltage Vceo = 60V. Emitter-base voltage Vebo = 6V. Collector dissipation Pc(max) = 0.75W. Collector current Ic = 1A. USHA India LTD
15 54F413 64 x 4 First-In First-Out Buffer Memory with Parallel I/O National Semiconductor
16 54F413D-CQB 64 x 4 First-In First-Out Buffer Memory with Parallel I/O National Semiconductor
17 54F413D-CQB 64 x 4 First-In First-Out Buffer Memory with Parallel I/O National Semiconductor
18 54F413D-MQB 64 x 4 First-In First-Out Buffer Memory with Parallel I/O National Semiconductor
19 54F413DM 64 x 4 First-In First-Out Buffer Memory with Parallel I/O National Semiconductor
20 54F413DMQB 64 x 4 First-In First-Out Buffer Memory with Parallel I/O National Semiconductor
21 54F413DMQB 64 x 4 First-In First-Out Buffer Memory with Parallel I/O National Semiconductor
22 54F413MW8 64 x 4 First-In First-Out Buffer Memory with Parallel I/O National Semiconductor
23 54F413P-CQB 64 x 4 First-In First-Out Buffer Memory with Parallel I/O National Semiconductor
24 54F413P-MQB 64 x 4 First-In First-Out Buffer Memory with Parallel I/O National Semiconductor
25 74F403 First-In First-Out (FIFO) Buffer Memory Fairchild Semiconductor
26 74F403A First-In First-Out (FIFO) Buffer Memory Fairchild Semiconductor
27 74F403ASPC First-In First-Out (FIFO) Buffer Memory Fairchild Semiconductor
28 74F413 64 x 4 First-In First-Out Buffer Memory with Parallel I/O Fairchild Semiconductor
29 74F413 64 x 4 First-In First-Out Buffer Memory with Parallel I/O National Semiconductor
30 74F413D-CQB 64 x 4 First-In First-Out Buffer Memory with Parallel I/O National Semiconductor


Datasheets found :: 298
Page: | 1 | 2 | 3 | 4 | 5 |



© 2024 - www Datasheet Catalog com