| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1SS154 |
Diode Silicon Epitaxial Schottky Barrier Type UHF~S Band Mixer/Detector Applications |
TOSHIBA |
| 2 |
1SS295 |
DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE UHF BAND MIXER APPLICATIONS |
TOSHIBA |
| 3 |
1SS315 |
Diode Silicon Epitaxial Schottky Barrier Type UHF Band Mixer Applications |
TOSHIBA |
| 4 |
2SD1071 |
TRIPLE DIFFUSED PLANER TYPE ULTRA HIGH TRANSISTOR HIGH VOLTAGE POWER AMPLIFIER |
Fuji Electric |
| 5 |
2SD929 |
TRIPLE DIFFUSED PLANER TYPE ULTRA HIGH TRANSISTOR |
Unknow |
| 6 |
JDH2S01T |
Diode Silicon Epitaxial Schottky Barrier Type UHF Band Mixer |
TOSHIBA |
| 7 |
MT4S100T |
TRANSISTOR SILICON-GERMANIUM NPN EPITAXIAL PLANER TYPE UHF LOW NOISE AMPLIFIER APPLICATION |
TOSHIBA |
| 8 |
MT4S100U |
TRANSISTOR SILICON-GERMANIUM NPN EPITAXIAL PLANER TYPE UHF LOW NOISE AMPLIFIER APPLICATION |
TOSHIBA |
| 9 |
MT4S101T |
TRANSISTOR SILICON-GERMANIUM NPN EPITAXIAL PLANER TYPE UHF LOW NOISE AMPLIFIER APPLICATION |
TOSHIBA |
| 10 |
MT4S101U |
TRANSISTOR SILICON-GERMANIUM NPN EPITAXIAL PLANER TYPE UHF LOW NOISE AMPLIFIER APPLICATION |
TOSHIBA |
| | | |
