| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1A212 |
High-Performance DUPLEX(Half-Duplex Communication) |
Mitel Semiconductor |
| 2 |
1A353 |
High-Performance Duplex(Half-Duplex Communication) |
Mitel Semiconductor |
| 3 |
71M6531F-DB |
Demo Board for the 71M6531D and 71M6531F |
MAXIM - Dallas Semiconductor |
| 4 |
71M6541F-DB |
Demo Board for the 71M6541F |
MAXIM - Dallas Semiconductor |
| 5 |
71M6543F-DB |
Demo Board for the 71M6543F |
MAXIM - Dallas Semiconductor |
| 6 |
71M6543F-DB-CT |
Demo Board for the 71M6543F |
MAXIM - Dallas Semiconductor |
| 7 |
ADN4690E |
3.3 V, 100 Mbps, Half-Duplex, High Speed M-LVDS Transceiver with Type 1 Receiver |
Analog Devices |
| 8 |
ADN4691E |
3.3 V, 200 Mbps, Half-Duplex, High Speed M-LVDS Transceiver with Type 1 Receiver |
Analog Devices |
| 9 |
ADN4694E |
3.3 V, 100 Mbps, Half-Duplex, High Speed M-LVDS Transceiver with Type 2 Receiver |
Analog Devices |
| 10 |
ADN4696E |
3.3 V, 200 Mbps, Half-Duplex, High Speed M-LVDS Transceiver with Type 2 Receiver |
Analog Devices |
| 11 |
BC328 |
Transistor. Switch. and amp. applications. Suitable for AF-driver and power output stages. Vces = -30V, Vceo = -25V, Vebo = -5V. Collector dissipation Pc(max) = 625mW. Ic = -800mA. |
USHA India LTD |
| 12 |
BC337 |
Transistor. Switching and ampplifier applications. Suitable for AF-driver stagees and power output stages. Collector-base Vcbo = 50V. Collector-emitter Vceo= 45V. Emitter-base Vebo = 5V. Collector dissipation Pc = 625mW. Collector current |
USHA India LTD |
| 13 |
BC338 |
Transistor. Switching and ampplifier applications. Suitable for AF-driver stagees and power output stages. Vces = 30V, Vceo= 25V, Vebo = 5V, Pc = 625mW, Ic = 800mA. |
USHA India LTD |
| 14 |
BUT11AF-D |
FULL PAK High Voltage NPN Power Transistor For Isolated Package Applications |
ON Semiconductor |
| 15 |
CBR1F-D010 |
Leaded Bridge Rectifier Fast Recovery |
Central Semiconductor |
| 16 |
CBR1F-D020 |
Leaded Bridge Rectifier Fast Recovery |
Central Semiconductor |
| 17 |
CBR1F-D020S |
SMD Bridge Rectifier Fast Recovery |
Central Semiconductor |
| 18 |
CBR1F-D040 |
Leaded Bridge Rectifier Fast Recovery |
Central Semiconductor |
| 19 |
CBR1F-D040S |
SMD Bridge Rectifier Fast Recovery |
Central Semiconductor |
| 20 |
CBR1F-D060 |
Leaded Bridge Rectifier Fast Recovery |
Central Semiconductor |
| 21 |
CBR1F-D060S |
SMD Bridge Rectifier Fast Recovery |
Central Semiconductor |
| 22 |
CBR1F-D080 |
Leaded Bridge Rectifier Fast Recovery |
Central Semiconductor |
| 23 |
CBR1F-D100 |
Leaded Bridge Rectifier Fast Recovery |
Central Semiconductor |
| 24 |
FMB857B |
256Mb F-die DDR SDRAM Specification |
Samsung Electronic |
| 25 |
Gegenzellen-/-Silicon-Back-Off-Diodes |
Gegenzellen / Silicon Back-Off-Diodes |
Diodes |
| 26 |
Gegenzellen-/-Silicon-Back-Off-Diodes |
Gegenzellen / Silicon Back-Off-Diodes |
Diodes |
| 27 |
HG12605F-DY |
LCD MODULE |
Hynix Semiconductor |
| 28 |
HRFC-A2-SF-D1 |
FC Type Fiber Optic Connectors |
Hirose Electric |
| 29 |
HY5DU12422BF-D4 |
DDR SDRAM - 512Mb |
Hynix Semiconductor |
| 30 |
HY5DU12422BF-D4 |
DDR SDRAM - 512Mb |
Hynix Semiconductor |
| | | |
