| No. |
Part Name |
Description |
Manufacturer |
| 1 |
ERJA1AF131U |
High Power Current Sensing Chip Resistors, Wide Terminal Type |
Panasonic |
| 2 |
ERJB1AF131U |
High Power Current Sensing Chip Resistors, Wide Terminal Type |
Panasonic |
| 3 |
ERJB2AF131V |
High Power Current Sensing Chip Resistors, Wide Terminal Type |
Panasonic |
| 4 |
GF131 |
Germanium PNP alloy diffusion transistor for VHF mixers |
RFT |
| 5 |
IRF131 |
N-Channel Power MOSFETs/ 20 A/ 60-100 V |
Fairchild Semiconductor |
| 6 |
IRF131 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 56A. |
General Electric Solid State |
| 7 |
IRF131 |
12A and 14A, 80V and 100V, 0.16 and 0.23 Ohm, N-Channel Power MOSFETs |
Intersil |
| 8 |
IRF131 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
| 9 |
IRF1310N |
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
| 10 |
IRF1310NL |
100V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
| 11 |
IRF1310NLPBF |
100V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
| 12 |
IRF1310NPBF |
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
| 13 |
IRF1310NS |
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 14 |
IRF1310NSTRL |
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 15 |
IRF1310NSTRR |
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 16 |
IRF1310NSTRRPBF |
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 17 |
IRF1310S |
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 18 |
IRF1312 |
80V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
| 19 |
IRF1312L |
80V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
| 20 |
IRF1312LPBF |
80V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
| 21 |
IRF1312PBF |
80V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
| 22 |
IRF1312S |
80V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 23 |
IRF1312SPBF |
80V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 24 |
IRF1312STRL |
80V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 25 |
IRF1312STRLPBF |
80V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 26 |
IRF1312STRR |
80V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 27 |
IRFF131 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 8.0A. |
General Electric Solid State |
| 28 |
IRKTF131-04HL |
V(rrm): 400V; V(ce): 2.25V; 130A fast thyristor/diode and thyristor/thyristor. For self-commutated inverters, DC choppers, electronic welders, induction heating, etc. |
International Rectifier |
| 29 |
IRKTF131-04HLN |
V(rrm): 400V; V(ce): 2.25V; 130A fast thyristor/diode and thyristor/thyristor. For self-commutated inverters, DC choppers, electronic welders, induction heating, etc. |
International Rectifier |
| 30 |
IRKTF131-08HL |
V(rrm): 800V; V(ce): 2.25V; 130A fast thyristor/diode and thyristor/thyristor. For self-commutated inverters, DC choppers, electronic welders, induction heating, etc. |
International Rectifier |
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