| No. |
Part Name |
Description |
Manufacturer |
| 1 |
AF4953P |
Dual P-Channel 30-V (D-S) MOSFET |
Anachip |
| 2 |
AF4953PS |
V(ds): -30V; V(gs): +-25V; I(s): -2.1A; dual P-channel 30-V (D-S) MOSFET |
Anachip |
| 3 |
AF4953PSA |
V(ds): -30V; V(gs): +-25V; I(s): -2.1A; dual P-channel 30-V (D-S) MOSFET |
Anachip |
| 4 |
AF4953PSL |
V(ds): -30V; V(gs): +-25V; I(s): -2.1A; dual P-channel 30-V (D-S) MOSFET |
Anachip |
| 5 |
AF4953PSLA |
V(ds): -30V; V(gs): +-25V; I(s): -2.1A; dual P-channel 30-V (D-S) MOSFET |
Anachip |
| 6 |
BF495 |
0.300W General Purpose NPN Plastic Leaded Transistor. 20V Vceo, 0.030A Ic, 35 - 125 hFE |
Continental Device India Limited |
| 7 |
BF495 |
High frequency transistor |
mble |
| 8 |
BF495 |
High frequency transistor |
mble |
| 9 |
BF495 |
NPN SILICON PLANAR EPITAXIAL TRANSISTORS |
Micro Electronics |
| 10 |
BF495 |
NPN medium frequency transistors |
Philips |
| 11 |
BF495B |
NPN medium frequency transistors |
Philips |
| 12 |
BF495C |
0.300W General Purpose NPN Plastic Leaded Transistor. 20V Vceo, 0.030A Ic, 65 - 135 hFE |
Continental Device India Limited |
| 13 |
BF495D |
0.300W General Purpose NPN Plastic Leaded Transistor. 20V Vceo, 0.030A Ic, 35 - 76 hFE |
Continental Device India Limited |
| 14 |
MGF4951 |
SUPER LOW NOISE InGaAs HEMT |
Mitsubishi Electric Corporation |
| 15 |
MGF4951A |
Super Low Noise InGaAs HEMT |
Mitsubishi Electric Corporation |
| 16 |
MGF4952A |
Super Low Noise InGaAs HEMT |
Mitsubishi Electric Corporation |
| 17 |
Q62702-F495 |
NPN Silicon Transistors With High Reverse Voltage (NPN Silicon Transistors With High Reverse Voltage) |
Siemens |
| | | |
