| No. |
Part Name |
Description |
Manufacturer |
| 1 |
74F641 |
Octal bus transceiver with common output enable, non-inverting (open collector) |
Philips |
| 2 |
IRF641 |
N-Channel Power MOSFETs/ 18A/ 150-200V |
Fairchild Semiconductor |
| 3 |
IRF641 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 18A. |
General Electric Solid State |
| 4 |
K4F641612B |
4M x 16bit CMOS Dynamic RAM with Fast Page Mode |
Samsung Electronic |
| 5 |
K4F641612B-L |
4M x 16bit CMOS Dynamic RAM with Fast Page Mode |
Samsung Electronic |
| 6 |
K4F641612B-TC |
4M x 16bit CMOS Dynamic RAM with Fast Page Mode |
Samsung Electronic |
| 7 |
K4F641612B-TC45 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns |
Samsung Electronic |
| 8 |
K4F641612B-TC50 |
4M x 16bit CMOS Dynamic RAM with Fast Page Mode |
Samsung Electronic |
| 9 |
K4F641612B-TC60 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 60ns |
Samsung Electronic |
| 10 |
K4F641612B-TL45 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns, low power |
Samsung Electronic |
| 11 |
K4F641612B-TL50 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 50ns, low power |
Samsung Electronic |
| 12 |
K4F641612B-TL60 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 60ns, low power |
Samsung Electronic |
| 13 |
K4F641612C |
4M x 16bit CMOS Dynamic RAM with Fast Page Mode |
Samsung Electronic |
| 14 |
K4F641612C-L |
4M x 16bit CMOS Dynamic RAM with Fast Page Mode |
Samsung Electronic |
| 15 |
K4F641612C-TC |
4M x 16bit CMOS Dynamic RAM with Fast Page Mode |
Samsung Electronic |
| 16 |
K4F641612C-TC45 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns |
Samsung Electronic |
| 17 |
K4F641612C-TC50 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 50ns |
Samsung Electronic |
| 18 |
K4F641612C-TC60 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 60ns |
Samsung Electronic |
| 19 |
K4F641612C-TL45 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns, low power |
Samsung Electronic |
| 20 |
K4F641612C-TL50 |
4M x 16bit CMOS Dynamic RAM with Fast Page Mode |
Samsung Electronic |
| 21 |
K4F641612C-TL60 |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 60ns, low power |
Samsung Electronic |
| 22 |
K4F661611D, K4F641611D |
4M x 16bit CMOS Dynamic RAM with Fast Page Mode Data Sheet |
Samsung Electronic |
| 23 |
K4F661612D, K4F641612D |
4M x 16bit CMOS Dynamic RAM with Fast Page Mode Data Sheet |
Samsung Electronic |
| 24 |
K4F661612D, K4F641612D |
4M x 16bit CMOS Dynamic RAM with Fast Page Mode Data Sheet |
Samsung Electronic |
| 25 |
K4F661612E, K4F641612E |
4M x 16bit CMOS Dynamic RAM with Fast Page Mode Data Sheet |
Samsung Electronic |
| 26 |
K4F661612E, K4F641612E |
4M x 16bit CMOS Dynamic RAM with Fast Page Mode Data Sheet |
Samsung Electronic |
| 27 |
MRF641 |
RF POWER TRANSISTOR NPN SILICON |
Motorola |
| 28 |
MRF641 |
Trans GP BJT NPN 16V 3A |
New Jersey Semiconductor |
| 29 |
MRF6414 |
RF POWER TRANSISTOR NPN SILICON |
Motorola |
| 30 |
MRF6414PHOTOMASTER |
NPN silicon RF power transistor |
Motorola |
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