| No. |
Part Name |
Description |
Manufacturer |
| 1 |
15FD11 |
Silicon diffused junction rectifier 300V 15A |
TOSHIBA |
| 2 |
22FD11 |
Silicon diffused junction rectifier 22A 300V |
TOSHIBA |
| 3 |
EFD110 |
Germanium diode |
IPRS Baneasa |
| 4 |
EFD110 |
Ge POINT CONTACT DIODE |
IPRS Baneasa |
| 5 |
EFD110 |
Germanium Point Contact Diode |
IPRS Baneasa |
| 6 |
EFD110 |
Tungsten-Germanium point contact diode |
IPRS Baneasa |
| 7 |
EFD111 |
Tungsten-Germanium point contact diode |
IPRS Baneasa |
| 8 |
EFD112 |
Germanium Point Contact Diode, is intended for use in low impedance detection circuits and A.G.C. damper |
IPRS Baneasa |
| 9 |
EFD112 |
Tungsten-Germanium point contact diode |
IPRS Baneasa |
| 10 |
EFD115 |
Germanium diode |
IPRS Baneasa |
| 11 |
EFD115 |
Ge POINT CONTACT DIODE |
IPRS Baneasa |
| 12 |
EFD115 |
Germanium Point Contact Diodes |
IPRS Baneasa |
| 13 |
EFD115 |
Tungsten-Germanium point contact diode |
IPRS Baneasa |
| 14 |
IRFD110 |
100V Single N-Channel HEXFET Power MOSFET in a HEXDIP package |
International Rectifier |
| 15 |
IRFD110 |
1A, 100V, 0.600 Ohm, N-Channel Power MOSFET |
Intersil |
| 16 |
IRFD112 |
Power MOSFET field effect power transistor. |
General Electric Solid State |
| 17 |
IRFD113 |
Power MOSFET field effect power transistor. |
General Electric Solid State |
| 18 |
SFD118 |
Germanium Diode |
COSEM |
| 19 |
SFD118A |
Gold bounded germanium signal diode - very high speed switching |
SESCOSEM |
| 20 |
SFD119 |
Germanium Diode |
COSEM |
| | | |
