| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1N100 |
Optimized for Radio Frequency Response |
Microsemi |
| 2 |
1N56AH |
Germanium Point Contact for Ring Modulator |
Hitachi Semiconductor |
| 3 |
1S1650 |
Silicon planar variable capacitance diode, suitable for Radio Tunner, Multiplier and Oscillator |
TOSHIBA |
| 4 |
1S1651 |
Silicon planar variable capacitance diode, suitable for Radio Tunner, Multiplier and Oscillator |
TOSHIBA |
| 5 |
232B |
Max voltage:40V; 200mA; industrial computer data line protector. For RS-232 transmission lines, catagory 3 systems, control & monitoring systems, analog signal transmissions and telemetry outstations |
Protek Devices |
| 6 |
232E |
Max voltage:40V; 200mA; industrial computer data line protector. For RS-232 transmission lines, catagory 3 systems, control & monitoring systems, analog signal transmissions and telemetry outstations |
Protek Devices |
| 7 |
2N1038 |
PNP Germanium medium power transistor designed for relay drivers, pulse amplifiers, audio amplifiers and high-current switching applications |
Motorola |
| 8 |
2N1039 |
PNP Germanium medium power transistor designed for relay drivers, pulse amplifiers, audio amplifiers and high-current switching applications |
Motorola |
| 9 |
2N1040 |
PNP Germanium medium power transistor designed for relay drivers, pulse amplifiers, audio amplifiers and high-current switching applications |
Motorola |
| 10 |
2N1041 |
PNP Germanium medium power transistor designed for relay drivers, pulse amplifiers, audio amplifiers and high-current switching applications |
Motorola |
| 11 |
2SA1287 |
FOR RELAY DRIVE POWER SUPPLY APPLICATION SILICON PNP EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 12 |
2SA1944 |
FOR RELAY DRIVE POWER SUPPLY APPLICATION SILICON PNP EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 13 |
2SC1972 |
NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers on VHF band Mobile radio applications) |
Mitsubishi Electric Corporation |
| 14 |
2SC3247 |
FOR RELAY DRIVE POWER SUPPLY APPLICAITON SILICON NPN EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 15 |
2SC5209 |
FOR RELAY DRIVE POWER SUPPLY APPLICATION SILICON NPN EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 16 |
3N159 |
MOS Field-Effect Transistor N-Channel Depletion Type, for RF up to 300MHz |
RCA Solid State |
| 17 |
4-AAZ10 |
Germanium diode quartet for ring modulators |
TUNGSRAM |
| 18 |
4-OA1154Q |
Germanium tip diode quartet for ring modulators |
TUNGSRAM |
| 19 |
40468A |
MOS Field-Effect Transistor N-Channel Depletion Type, for RF Amplifier and Mixer Applications in FM and AM/FM receivers |
RCA Solid State |
| 20 |
40559A |
MOS Field-Effect Transistor N-Channel Depletion Type, for RF Amplifier and Mixer Applications in FM and AM/FM receivers |
RCA Solid State |
| 21 |
40820 |
Silicon Dual Insulated-Gate Field-Effect N-Channel Transistor for RF amplifier |
RCA Solid State |
| 22 |
40822 |
Silicon Dual Insulated-Gate Field-Effect N-Channel Transistor, for RF amplifiers |
RCA Solid State |
| 23 |
5962-9855001QXA |
PLLatinum 1.2 GHz Frequency Synthesizer for RF Personal Communications |
National Semiconductor |
| 24 |
5962-9855002QXA |
PLLatinum 2.5 GHz Frequency Synthesizer for RF Personal Communications |
National Semiconductor |
| 25 |
5962-9855003QXA |
PLLatinum Frequency Synthesizer for RF Personal Communications |
National Semiconductor |
| 26 |
61SV |
Infrared photoconductive detector, lead sulphide detector for room temperature operation |
Mullard |
| 27 |
62SV |
Infrared photoconductive detector, lead sulphide detector for room temperature operation |
Mullard |
| 28 |
7109 |
Thermople Detectors for Rediation Measurements form UC to FAR IR |
Oriel |
| 29 |
82007 |
IR Receiver Modules for Remote Control Systems |
Vishay |
| 30 |
82092 |
IR Receiver Modules for Remote Control Systems |
Vishay |
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