| No. |
Part Name |
Description |
Manufacturer |
| 1 |
BFP91A |
NPN gold-metallized 1GHz broadband transistor, low noise, high gain and low distorsion |
Philips |
| 2 |
IRFP9130 |
P-CHANNEL POWER MOSFETS |
Samsung Electronic |
| 3 |
IRFP9130 |
P-CHANNEL POWER MOSFETS |
Samsung Electronic |
| 4 |
IRFP9131 |
P-CHANNEL POWER MOSFETS |
Samsung Electronic |
| 5 |
IRFP9131 |
P-CHANNEL POWER MOSFETS |
Samsung Electronic |
| 6 |
IRFP9132 |
P-CHANNEL POWER MOSFETS |
Samsung Electronic |
| 7 |
IRFP9132 |
P-CHANNEL POWER MOSFETS |
Samsung Electronic |
| 8 |
IRFP9132 |
P-CHANNEL POWER MOSFETS |
Samsung Electronic |
| 9 |
IRFP9132 |
P-CHANNEL POWER MOSFETS |
Samsung Electronic |
| 10 |
IRFP9133 |
P-CHANNEL POWER MOSFETS |
Samsung Electronic |
| 11 |
IRFP9133 |
P-CHANNEL POWER MOSFETS |
Samsung Electronic |
| 12 |
IRFP913X |
P-CHANNEL POWER MOSFETS |
Samsung Electronic |
| 13 |
IRFP9140 |
19A, 100V, 0.200 Ohm, P-Channel Power MOSFET |
Fairchild Semiconductor |
| 14 |
IRFP9140 |
-100V Single P-Channel HEXFET Power MOSFET in a TO-247AC package |
International Rectifier |
| 15 |
IRFP9140 |
P-Channel Power MOSFET |
Intersil |
| 16 |
IRFP9140 |
100 V, P-channel power MOSFET |
Samsung Electronic |
| 17 |
IRFP9140N |
-100V Single P-Channel HEXFET Power MOSFET in a TO-247AC package |
International Rectifier |
| 18 |
IRFP9140NPBF |
-100V Single P-Channel HEXFET Power MOSFET in a TO-247AC package |
International Rectifier |
| 19 |
IRFP9141 |
60 V, P-channel power MOSFET |
Samsung Electronic |
| 20 |
IRFP9142 |
100 V, P-channel power MOSFET |
Samsung Electronic |
| 21 |
IRFP9143 |
60 V, P-channel power MOSFET |
Samsung Electronic |
| 22 |
IRFP9150 |
25A, 100V, 0.150 Ohm, P-Channel Power MOSFET |
Fairchild Semiconductor |
| 23 |
IRFP9150 |
P-Channel Power MOSFET |
Intersil |
| 24 |
PB-IRFP9140N |
Leaded -100V Single P-Channel HEXFET Power MOSFET in a TO-247AC package |
International Rectifier |
| | | |
