| No. |
Part Name |
Description |
Manufacturer |
| 1 |
FS1001-7R |
100 Watt DC-DC Converters |
Power-One |
| 2 |
FS1009BH |
200 V, standard SCR |
Fagor |
| 3 |
FS1009DH |
400 V, standard SCR |
Fagor |
| 4 |
FS1009MH |
600 V, standard SCR |
Fagor |
| 5 |
FS100KMJ-03 |
MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE |
Mitsubishi Electric Corporation |
| 6 |
FS100KMJ-03 |
Nch POWER MOSFET HIGH-SPEED SWITCHING USE |
Powerex Power Semiconductors |
| 7 |
FS100KMJ-03F |
Power MOSFETs: FL Series |
Mitsubishi Electric Corporation |
| 8 |
FS100KMJ-03F |
Transistors>Switching/MOSFETs |
Renesas |
| 9 |
FS100SMJ-03 |
MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE |
Mitsubishi Electric Corporation |
| 10 |
FS100SMJ-03 |
Nch POWER MOSFET HIGH-SPEED SWITCHING USE |
Powerex Power Semiconductors |
| 11 |
FS100UM-03 |
MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE |
Mitsubishi Electric Corporation |
| 12 |
FS100UM-03 |
Nch POWER MOSFET HIGH-SPEED SWITCHING USE |
Powerex Power Semiconductors |
| 13 |
FS100UM-3 |
100A power mosfet for high-speed switching use |
Mitsubishi Electric Corporation |
| 14 |
FS100UMJ-03 |
MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE |
Mitsubishi Electric Corporation |
| 15 |
FS100UMJ-03 |
Nch POWER MOSFET HIGH-SPEED SWITCHING USE |
Powerex Power Semiconductors |
| 16 |
FS100UMJ-03F |
Transistors>Switching/MOSFETs |
Renesas |
| 17 |
FS100VSJ-03 |
MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE |
Mitsubishi Electric Corporation |
| 18 |
FS100VSJ-03 |
Nch POWER MOSFET HIGH-SPEED SWITCHING USE |
Powerex Power Semiconductors |
| 19 |
FS100VSJ-03F |
Transistors>Switching/MOSFETs |
Renesas |
| 20 |
RFS1003 |
The RFS1003 power amplifier is a high-power, high-performance GaAs MESFET IC designed for use in transmit applications in the 5.1-5.9 ... |
Anadigics Inc |
| 21 |
RFS1003 |
The RFS1003 power amplifier is a high-power, high-performance GaAs MESFET IC designed for use in transmit applications in the 5.1-5.9 ... |
Anadigics Inc |
| 22 |
RFS1006 |
The RFS1006 power amplifier is a high-power, high-performance GaAs MESFET IC designed for use in a transmit applications in the 3.4-3.6 ... |
Anadigics Inc |
| 23 |
RFS1006 |
The RFS1006 power amplifier is a high-power, high-performance GaAs MESFET IC designed for use in a transmit applications in the 3.4-3.6 ... |
Anadigics Inc |
| 24 |
SFS1001G |
Discrete Devices -Diode-Super Fast Rectifier |
Taiwan Semiconductor |
| 25 |
SFS1002G |
Discrete Devices -Diode-Super Fast Rectifier |
Taiwan Semiconductor |
| 26 |
SFS1003G |
Discrete Devices -Diode-Super Fast Rectifier |
Taiwan Semiconductor |
| 27 |
SFS1004G |
Discrete Devices -Diode-Super Fast Rectifier |
Taiwan Semiconductor |
| 28 |
SFS1005G |
Discrete Devices -Diode-Super Fast Rectifier |
Taiwan Semiconductor |
| 29 |
SFS1006G |
Discrete Devices -Diode-Super Fast Rectifier |
Taiwan Semiconductor |
| 30 |
SFS1007G |
Discrete Devices -Diode-Super Fast Rectifier |
Taiwan Semiconductor |
| | | |
