| No. |
Part Name |
Description |
Manufacturer |
| 1 |
01BZA8 |
DIODES (DIODES FOR PROTECTING AGAINST ESD) |
TOSHIBA |
| 2 |
01BZA8.2 |
Diodes for Protecting Against ESD |
TOSHIBA |
| 3 |
01ZA8 |
DIODES( DIODES FOR PROTECTING AGAINST ESD) |
TOSHIBA |
| 4 |
01ZA8.2 |
Diodes for Protecting Against ESD |
TOSHIBA |
| 5 |
01ZAB8.2 |
DIODES( DIODES FOR PROTECTING AGAINST ESD) |
TOSHIBA |
| 6 |
15W_POWER_PLUG |
POWER PLUG AC/DC SMPS, WALL PLUG IN, 15 WATT |
ST Microelectronics |
| 7 |
1N4001 |
Rectifiers(Rugged glass package, using a high temperature alloyed construction) |
Philips |
| 8 |
1N4001G |
Rectifiers(Rugged glass package, using a high temperature alloyed construction) |
Philips |
| 9 |
1N4002 |
Rectifiers(Rugged glass package, using a high temperature alloyed construction) |
Philips |
| 10 |
1N4002G |
Rectifiers(Rugged glass package, using a high temperature alloyed construction) |
Philips |
| 11 |
1N4003 |
Rectifiers(Rugged glass package, using a high temperature alloyed construction) |
Philips |
| 12 |
1N4003G |
Rectifiers(Rugged glass package, using a high temperature alloyed construction) |
Philips |
| 13 |
1N4004 |
Rectifiers(Rugged glass package, using a high temperature alloyed construction) |
Philips |
| 14 |
1N4004G |
Rectifiers(Rugged glass package, using a high temperature alloyed construction) |
Philips |
| 15 |
1N4005 |
Rectifiers(Rugged glass package, using a high temperature alloyed construction) |
Philips |
| 16 |
1N4005G |
Rectifiers(Rugged glass package, using a high temperature alloyed construction) |
Philips |
| 17 |
1N4006 |
Rectifiers(Rugged glass package, using a high temperature alloyed construction) |
Philips |
| 18 |
1N4006G |
Rectifiers(Rugged glass package, using a high temperature alloyed construction) |
Philips |
| 19 |
1N4007 |
Rectifiers(Rugged glass package, using a high temperature alloyed construction) |
Philips |
| 20 |
1N4007G |
Rectifiers(Rugged glass package, using a high temperature alloyed construction) |
Philips |
| 21 |
1N4148 |
Silicon epitaxial planar diodes for extreme speed switching applications |
AEG-TELEFUNKEN |
| 22 |
1N4149 |
Silicon epitaxial planar diodes for extreme speed switching applications |
AEG-TELEFUNKEN |
| 23 |
1N4152 |
Silicon epitaxial planar diode for extreme speed switching applications |
AEG-TELEFUNKEN |
| 24 |
1N4153 |
Silicon epitaxial planar diode for extreme speed switching applications |
AEG-TELEFUNKEN |
| 25 |
1N4446 |
Silicon epitaxial planar diodes for extreme speed switching applications |
AEG-TELEFUNKEN |
| 26 |
1N4447 |
Silicon epitaxial planar diodes for extreme speed switching applications |
AEG-TELEFUNKEN |
| 27 |
1N4448 |
Silicon epitaxial planar diodes for extreme speed switching applications |
AEG-TELEFUNKEN |
| 28 |
1N4449 |
Silicon epitaxial planar diodes for extreme speed switching applications |
AEG-TELEFUNKEN |
| 29 |
1SS181 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 30 |
1SS184 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| | | |
