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Datasheets found :: 7321 Page: | 1 | 2 | 3 | 4 | 5 |
Nr. Part Name Description Manufacturer
1 13PD100-F The 13PD100-F is an InGaAs photodiode with a 100mm-diameter photosensitive region packaged in a coaxial fiber pigtailed module. Anadigics Inc
2 13PD100-S The 13PD100-S, an InGaAs photodiode with a 100µm-diameter photosensitive region and mounted on a metallized ceramic substrate, ... Anadigics Inc
3 13PD100-ST The 13PD75-ST, -SMA, -SC, an InGaAs photodiode with a 75µm-diameter photosensitive region packaged in a TO-46 header and aligned ... Anadigics Inc
4 13PD100-TO The 13PD100-TO, an InGaAs photodiode with a 100µm-diameter photosensitive region and packaged in a TO-46 header, is the largest ... Anadigics Inc
5 13PD150-S The 13PD150-S, an InGaAs photodiode with a 150µm-diameter photosensitive region and mounted on a metallized ceramic substrate, ... Anadigics Inc
6 13PD150-ST The 13PD150-ST, -SMA, -FC, -SC, an InGaAs photodiode with a 150µm-diameter photosensitive region packaged in a TO-46 header ... Anadigics Inc
7 13PD150-TO The 13PD150-TO, an InGaAs photodiode with a 150µm-diameter photosensitive region and packaged in a TO-46 header, is intended ... Anadigics Inc
8 1N6264 GaAs INFRARED EMITTING DIODE Fairchild Semiconductor
9 1N6264 GAAS INFRARED EMITTING DIODE QT Optoelectronics
10 1N6265 GaAs INFRARED EMITTING DIODE Fairchild Semiconductor
11 1N6265 GAAS INFRARED EMITTING DIODE QT Optoelectronics
12 1N6266 GaAs INFRARED EMITTING DIODE Fairchild Semiconductor
13 1N6266 GAAS INFRARED EMITTING DIODE QT Optoelectronics
14 2SK2685 GaAs HEMT Hitachi Semiconductor
15 2SK3001 GaAs HEMT Low Noise Amplifier Hitachi Semiconductor
16 319SPA-V6M20 INGAAS APD PREAMP MODULE FOR THE 1.31 UM AND 1.55 UM WAVELENGTH RANGE Mitsubishi Electric Corporation
17 319SPA-W6M20 INGAAS APD PREAMP MODULE FOR THE 1.31 UM AND 1.55 UM WAVELENGTH RANGE Mitsubishi Electric Corporation
18 319SPA-X6M20 INGAAS APD PREAMP MODULE FOR THE 1.31 UM AND 1.55 UM WAVELENGTH RANGE Mitsubishi Electric Corporation
19 35PD10M The 35PD5M-TO, an InGaAs photodiode with a 5mm-diameter photosensitive packaged in a TO-5 header, is designed for applications in ... Anadigics Inc
20 35PD1M-TO The 35PD1M-TO, an InGaAs photodiode with a 1mm-diameter photosensitive packaged in a TO-46 header, is designed for applications in ... Anadigics Inc
21 3SK147 GaAs N-Channel Dual-Gate MES FET SONY
22 3SK148 GaAs N-Channel Dual-Gate MES FET SONY
23 3SK149 GaAs N-Channel Dual-Gate MES FET SONY
24 3SK165 GaAs N-channel Dual Gate MES FET SONY
25 3SK165A GaAs N-channel Dual Gate MES FET SONY
26 3SK165A-0 GaAs N-channel Dual Gate MES FET SONY
27 3SK165A-1 GaAs N-channel Dual Gate MES FET SONY
28 3SK166 GaAs N-channel Dual Gate MES FET SONY
29 3SK166A GaAs N-channel Dual Gate MES FET SONY
30 3SK166A-0 GaAs N-channel Dual Gate MES FET SONY


Datasheets found :: 7321 Page: | 1 | 2 | 3 | 4 | 5 |


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