| No. |
Part Name |
Description |
Manufacturer |
| 1 |
AT-42000 |
Up to 6 GHz Medium Power Up to 6 GHz Medium Power |
Agilent (Hewlett-Packard) |
| 2 |
AT-42000 |
Up to 6 GHz Medium Power Up to 6 GHz Medium Power |
Agilent (Hewlett-Packard) |
| 3 |
AT-42000-GP4 |
Up to 6 GHz Medium Power Up to 6 GHz Medium Power |
Agilent (Hewlett-Packard) |
| 4 |
AT-42000-GP4 |
Up to 6 GHz Medium Power Up to 6 GHz Medium Power |
Agilent (Hewlett-Packard) |
| 5 |
AT-42010 |
Up to 6 GHz Medium Power Silicon Bipolar Transistor |
Agilent (Hewlett-Packard) |
| 6 |
AT-42035 |
Up to 6 GHz Medium Power Silicon Bipolar Transistor |
Agilent (Hewlett-Packard) |
| 7 |
AT-42070 |
Up to 6 GHz Medium Power Silicon Bipolar Transistor |
Agilent (Hewlett-Packard) |
| 8 |
AT-42085 |
Up to 6 GHz Medium Power Up to 6 GHz Medium Power |
Agilent (Hewlett-Packard) |
| 9 |
AT-42085 |
Up to 6 GHz Medium Power Up to 6 GHz Medium Power |
Agilent (Hewlett-Packard) |
| 10 |
AT-42086 |
Up to 6 GHz Medium Power Silicon Bipolar Transistor |
Agilent (Hewlett-Packard) |
| 11 |
AT-42086-BLK |
Up to 6 GHz Medium Power Silicon Bipolar Transistor |
Agilent (Hewlett-Packard) |
| 12 |
AT-42086-TR1 |
Up to 6 GHz Medium Power Silicon Bipolar Transistor |
Agilent (Hewlett-Packard) |
| 13 |
ATF-44101 |
2-8 GHz Medium Power Gallium Arsenide FET |
Agilent (Hewlett-Packard) |
| 14 |
ATF-45101 |
2-8 GHz Medium Power Gallium Arsenide FET |
Agilent (Hewlett-Packard) |
| 15 |
ATF-45171 |
2-8 GHz Medium Power Gallium Arsenide FET |
Agilent (Hewlett-Packard) |
| 16 |
ATF-46101 |
2-10 GHz Medium Power Gallium Arsenide FET |
Agilent (Hewlett-Packard) |
| 17 |
ATF-46171 |
2-10 GHz Medium Power Gallium Arsenide FET |
Agilent (Hewlett-Packard) |
| 18 |
AWM6268 |
2.5 to 2.7 GHz Mobile WiMAX/LTE Power Amplifier Module |
Skyworks Solutions |
| 19 |
AWT6283R |
3.3 to 3.8 GHz Mobile WiMAX Power Amplifier Module |
Skyworks Solutions |
| 20 |
AWT6283RM49P8 |
3.3 to 3.8 GHz Mobile WiMAX Power Amplifier Module |
Skyworks Solutions |
| 21 |
BAT14-03 |
Silicon Schottky Diode (DBS mixer application to 12GHz Medium barrier type Low capacitance) |
Siemens |
| 22 |
BAT14-03W |
Silicon Schottky Diode (DBS mixer application to 12GHz Medium barrier type Low capacitance) |
Siemens |
| 23 |
CHA3092 |
20-33GHz Medium Power Amplifier |
United Monolithic Semiconductors |
| 24 |
CHA3092-99F/00 |
20-33GHz Medium Power Amplifier |
United Monolithic Semiconductors |
| 25 |
CHA3092RBF |
20-33GHz Medium Power Amplifier |
United Monolithic Semiconductors |
| 26 |
CHA3092RBF/24 |
20-33GHz Medium Power Amplifier |
United Monolithic Semiconductors |
| 27 |
CHA3093C |
20-40GHz Medium Power Amplifier |
United Monolithic Semiconductors |
| 28 |
CHA3093C99F/00 |
20-40GHz Medium Power Amplifier |
United Monolithic Semiconductors |
| 29 |
CHA5215A |
5.8GHz Medium Power Amplifier |
United Monolithic Semiconductors |
| 30 |
CHA5215A99F/00 |
5.8GHz Medium Power Amplifier |
United Monolithic Semiconductors |
| | | |
