| No. |
Part Name |
Description |
Manufacturer |
| 1 |
AME8815AEGT250 |
1.5A CMOS LDO |
AME |
| 2 |
AME8815AEGT250 |
1.5A CMOS LDO |
Analog Microelectronics |
| 3 |
AME8815AEGT250Z |
1.5A CMOS LDO |
AME |
| 4 |
AME8815BEGT250 |
1.5A CMOS LDO |
AME |
| 5 |
AME8815BEGT250 |
1.5A CMOS LDO |
Analog Microelectronics |
| 6 |
AME8815BEGT250Z |
1.5A CMOS LDO |
AME |
| 7 |
AME8845AEGT250Z |
3A CMOS LDO |
Analog Microelectronics |
| 8 |
AME8845BEGT250Z |
3A CMOS LDO |
Analog Microelectronics |
| 9 |
AME8845BEGT250Z |
3A CMOS LDO |
Analog Microelectronics |
| 10 |
APTGT25A120D1 |
Phase Leg - IGBT |
Advanced Power Technology |
| 11 |
APTGT25DA120D1 |
Boost Chopper - IGBT |
Advanced Power Technology |
| 12 |
APTGT25SK120D1 |
Buck Chopper - IGBT |
Advanced Power Technology |
| 13 |
APTGT25X120T3G |
Three Phase Bridge |
Microsemi |
| 14 |
GT250 |
Silicon NPN Very High Power Darlington Transistor |
IPRS Baneasa |
| 15 |
GT250/10 |
Silicon NPN Very High Power Darlington Transistor 1000V |
IPRS Baneasa |
| 16 |
GT250/3 |
Silicon NPN Very High Power Darlington Transistor 300V |
IPRS Baneasa |
| 17 |
GT250/4 |
Silicon NPN Very High Power Darlington Transistor 400V |
IPRS Baneasa |
| 18 |
GT250/5 |
Silicon NPN Very High Power Darlington Transistor 500V |
IPRS Baneasa |
| 19 |
GT250/6 |
Silicon NPN Very High Power Darlington Transistor 600V |
IPRS Baneasa |
| 20 |
GT250/7 |
Silicon NPN Very High Power Darlington Transistor 700V |
IPRS Baneasa |
| 21 |
GT250/8 |
Silicon NPN Very High Power Darlington Transistor 800V |
IPRS Baneasa |
| 22 |
GT250/9 |
Silicon NPN Very High Power Darlington Transistor 900V |
IPRS Baneasa |
| 23 |
GT25G101 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS |
TOSHIBA |
| 24 |
GT25G101(SM) |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS |
TOSHIBA |
| 25 |
GT25G101SM |
N CHANNEL IGBT (STROBE FLASH APPLICATIONS) |
TOSHIBA |
| 26 |
GT25G102 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS |
TOSHIBA |
| 27 |
GT25G102(SM) |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS |
TOSHIBA |
| 28 |
GT25G102SM |
N CHANNEL IGBT (STROBE FLASH APPLICATIONS) |
TOSHIBA |
| 29 |
GT25J101 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Motor Control Applications |
TOSHIBA |
| 30 |
GT25J102 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Motor Control Applications |
TOSHIBA |
| | | |
