| No. |
Part Name |
Description |
Manufacturer |
| 1 |
ACT88320 |
Advanced PMIC with 20 V OVP, Inrush Control, Bypass Switch & eFuse |
Qorvo |
| 2 |
AD7176-2 |
24-Bit, 250 kSPS Sigma-Delta ADC with 20 μs Settling Data Sheet (Rev A, 04/2013) |
Analog Devices |
| 3 |
CSD17501Q5A |
30V, N-Channel NexFET� Power MOSFET with 20 Volt Vgs |
Texas Instruments |
| 4 |
CSD17505Q5A |
30V, N-Channel NexFET� Power MOSFET with 20 Volt Vgs |
Texas Instruments |
| 5 |
CSD17506Q5A |
30V, N-Channel NexFET� Power MOSFET with 20 Volt Vgs |
Texas Instruments |
| 6 |
CSD17507Q5A |
30V N-Channel High Side NexFET Power MOSFET with 20 Volt Vgs |
Texas Instruments |
| 7 |
CSD17510Q5A |
30V N-Channel Low Side NexFET Power MOSFET with 20 Volt Vgs |
Texas Instruments |
| 8 |
IDTQS3389 |
QUICKSWITCH PRODUCTS LAST VALUE LATCH 20 ACTIVE BUS TERMINATORS |
IDT |
| 9 |
IDTQS3389Q |
QUICKSWITCH PRODUCTS LAST VALUE LATCH 20 ACTIVE BUS TERMINATORS |
IDT |
| 10 |
IRF6609TR1PBF |
A 20V N-channel HEXFET Power MOSFET with 20 volt gate in the DirectFET MT package rated at 150 amperes. |
International Rectifier |
| 11 |
IRF6609TRPBF |
A 20V N-channel HEXFET Power MOSFET with 20 volt gate in the DirectFET MT package rated at 150 amperes. |
International Rectifier |
| 12 |
IRF6613TR1PBF |
A 40V N-channel HEXFET Power MOSFET with 20 volt gate in the DirectFET MT package rated at 150 amperes. |
International Rectifier |
| 13 |
IRF6618TR1PBF |
A 30V N-channel HEXFET Power MOSFET with 20 volt gate in the DirectFET MT package rated at 150 amperes. |
International Rectifier |
| 14 |
IRF6678TR1 |
Leaded A 30V N-channel HEXFET Power MOSFET with 20 volt gate in the DirectFET MX package rated at 150 amperes. |
International Rectifier |
| 15 |
IRF6678TR1PBF |
A 30V N-channel HEXFET Power MOSFET with 20 volt gate in the DirectFET MX package rated at 150 amperes. |
International Rectifier |
| 16 |
IRF6678TRPBF |
A 30V N-channel HEXFET Power MOSFET with 20 volt gate in the DirectFET MX package rated at 150 amperes. |
International Rectifier |
| 17 |
IRF6691TR1PBF |
A 20V Single N-Channel HEXFET Power MOSFET with Schottky diode with 20 volt gate in a DirectFET MT package rated at 180 amperes. |
International Rectifier |
| 18 |
ISD1420P |
Single-chip voice record/playback device with 20 seconds duration |
Information Storage Devices |
| 19 |
ISD1420PI |
Single-chip voice record/playback device with 20 seconds duration |
Information Storage Devices |
| 20 |
ISD1420S |
Single-chip voice record/playback device with 20 seconds duration |
Information Storage Devices |
| 21 |
ISD1420SI |
Single-chip voice record/playback device with 20 seconds duration |
Information Storage Devices |
| 22 |
ISD1420X |
Single-chip voice record/playback device with 20 seconds duration |
Information Storage Devices |
| 23 |
M25P05 |
NOT FOR NEW DESIGN - 512 KBIT, LOW VOLTAGE, SERIAL FLASH MEMORY WITH 20 MHZ SPI BUS INTERFACE |
SGS Thomson Microelectronics |
| 24 |
M25P05 |
NOT FOR NEW DESIGN - 512 KBIT, LOW VOLTAGE, SERIAL FLASH MEMORY WITH 20 MHZ SPI BUS INTERFACE |
ST Microelectronics |
| 25 |
M25P05-V |
NOT FOR NEW DESIGN - 512 KBIT, LOW VOLTAGE, SERIAL FLASH MEMORY WITH 20 MHZ SPI BUS INTERFACE |
SGS Thomson Microelectronics |
| 26 |
M25P05-V |
NOT FOR NEW DESIGN - 512 KBIT, LOW VOLTAGE, SERIAL FLASH MEMORY WITH 20 MHZ SPI BUS INTERFACE |
ST Microelectronics |
| 27 |
M25P05VMN6T |
512 Kbit/ Low Voltage/ Serial Flash Memory With 20 MHz SPI Bus Interface |
ST Microelectronics |
| 28 |
M25P10 |
NOT FOR NEW DESIGN - 1 MBIT, LOW VOLTAGE, SERIAL FLASH MEMORY WITH 20 MHZ SPI BUS INTERFACE |
SGS Thomson Microelectronics |
| 29 |
M25P10 |
1 Mbit Low Voltage Paged Flash Memory With 20 MHz Serial SPI Bus Interface |
SGS Thomson Microelectronics |
| 30 |
M25P10 |
NOT FOR NEW DESIGN - 1 MBIT, LOW VOLTAGE, SERIAL FLASH MEMORY WITH 20 MHZ SPI BUS INTERFACE |
ST Microelectronics |
| | | |
