| No. |
Part Name |
Description |
Manufacturer |
| 1 |
ASI1010 |
NPN SILICON RF POWER TRANSISTOR |
Advanced Semiconductor |
| 2 |
CMCPCI101Q |
Compact PCI backplane interface/termination IC |
California Micro Devices Corp |
| 3 |
CMCPCI101T |
Compact PCI backplane interface/termination IC |
California Micro Devices Corp |
| 4 |
DI101 |
100 V, 1 A dual-in-line glass passivated single-phase silicon bridge rectifier |
Invac |
| 5 |
DI101 |
DUAL-IN-LINE GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER(VOLTAGE - 50 to 1000 Volts CURRENT - 1.0~1.5 Amperes) |
Panjit International Inc |
| 6 |
DI101 |
100 V, 1 A, dual-in-line glass passivated single-phase bridge rectifier |
TRANSYS Electronics Limited |
| 7 |
DI101 |
DUAL-IN-LINE GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER |
TRSYS |
| 8 |
DI1010 |
1000 V, 1 A dual-in-line glass passivated single-phase silicon bridge rectifier |
Invac |
| 9 |
DI1010 |
DUAL-IN-LINE GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER(VOLTAGE - 50 to 1000 Volts CURRENT - 1.0~1.5 Amperes) |
Panjit International Inc |
| 10 |
DI1010 |
1000 V, 1 A, dual-in-line glass passivated single-phase bridge rectifier |
TRANSYS Electronics Limited |
| 11 |
DI1010 |
DUAL-IN-LINE GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER |
TRSYS |
| 12 |
EKI10126 |
Silicon N-Channel MOSFET |
Sanken |
| 13 |
EKI10198 |
Silicon N-Channel MOSFET |
Sanken |
| 14 |
FKI10126 |
Silicon N-Channel MOSFET |
Sanken |
| 15 |
FKI10198 |
Silicon N-Channel MOSFET |
Sanken |
| 16 |
GKI10194 |
Silicon N-Channel MOSFET |
Sanken |
| 17 |
IRFI1010 |
Power MOSFET(Vdss=55V/ Rds(on)=0.012ohm/ Id=49A) |
International Rectifier |
| 18 |
IRFI1010N |
55V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package |
International Rectifier |
| 19 |
IRFI1010NPBF |
55V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package |
International Rectifier |
| 20 |
ISPLSI1016 |
In-System Programmable High Density PLD |
Lattice Semiconductor |
| 21 |
ISPLSI1016/883 |
In-System Programmable High Density PLD |
Lattice Semiconductor |
| 22 |
ISPLSI1016E |
In-System Programmable High Density PLD |
Lattice Semiconductor |
| 23 |
ISPLSI1016E-100LJ |
In-System Programmable High Density PLD |
Lattice Semiconductor |
| 24 |
ISPLSI1016E-100LT44 |
In-System Programmable High Density PLD |
Lattice Semiconductor |
| 25 |
ISPLSI1016E-125LJ |
In-System Programmable High Density PLD |
Lattice Semiconductor |
| 26 |
ISPLSI1016E-125LT44 |
In-System Programmable High Density PLD |
Lattice Semiconductor |
| 27 |
ISPLSI1016E-80LJ |
In-System Programmable High Density PLD |
Lattice Semiconductor |
| 28 |
ISPLSI1016E-80LJI |
In-System Programmable High Density PLD |
Lattice Semiconductor |
| 29 |
ISPLSI1016E-80LT44 |
In-System Programmable High Density PLD |
Lattice Semiconductor |
| 30 |
ISPLSI1016E-80LT44I |
In-System Programmable High Density PLD |
Lattice Semiconductor |
| | | |
