| No. |
Part Name |
Description |
Manufacturer |
| 1 |
10PR-110-R |
HIGH-DENSITY SIGNAL CONDITIONERS 10-PACK PULSE SCALER |
Enlaircon Pty Ltd |
| 2 |
10PR-120-R |
HIGH-DENSITY SIGNAL CONDITIONERS 10-PACK PULSE SCALER |
Enlaircon Pty Ltd |
| 3 |
10PR-130-R |
HIGH-DENSITY SIGNAL CONDITIONERS 10-PACK PULSE SCALER |
Enlaircon Pty Ltd |
| 4 |
10PR-140-R |
HIGH-DENSITY SIGNAL CONDITIONERS 10-PACK PULSE SCALER |
Enlaircon Pty Ltd |
| 5 |
10PR-210-R |
HIGH-DENSITY SIGNAL CONDITIONERS 10-PACK PULSE SCALER |
Enlaircon Pty Ltd |
| 6 |
10PR-220-R |
HIGH-DENSITY SIGNAL CONDITIONERS 10-PACK PULSE SCALER |
Enlaircon Pty Ltd |
| 7 |
10PR-230-R |
HIGH-DENSITY SIGNAL CONDITIONERS 10-PACK PULSE SCALER |
Enlaircon Pty Ltd |
| 8 |
10PR-240-R |
HIGH-DENSITY SIGNAL CONDITIONERS 10-PACK PULSE SCALER |
Enlaircon Pty Ltd |
| 9 |
ADG714 |
CMOS, Low Voltage, SPI/QSPI/Mircowire Compatible Interface, Serially Controlled, Octal SPST Switches |
Analog Devices |
| 10 |
ASD1-61302-K3/UL |
PLUG IN SIGNAL CONDITIONERS M - UNIT DC ALARM |
Enlaircon Pty Ltd |
| 11 |
ELC-10PR |
HIGH-DENSITY SIGNAL CONDITIONERS 10-PACK PULSE SCALER |
Enlaircon Pty Ltd |
| 12 |
ELC-ASD1 |
PLUG IN SIGNAL CONDITIONERS M - UNIT DC ALARM |
Enlaircon Pty Ltd |
| 13 |
HSDL-S102 |
HSDL-S102 · IrCOMM |
Agilent (Hewlett-Packard) |
| 14 |
MF600SWI |
Mirco Filter For ADSL CPE Side |
YCL |
| 15 |
MF601F |
Mirco Filter For ADSL CPE Side |
YCL |
| 16 |
MF602F |
Mirco Filter For ADSL CPE Side |
YCL |
| 17 |
W4NRD8C-U000 |
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 18 |
W4NXD8C-0000 |
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 19 |
W4NXD8C-L000 |
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 20 |
W4NXD8C-S000 |
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 21 |
W4NXD8D-0000 |
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 22 |
W4NXD8D-S000 |
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 23 |
W4NXD8G-0000 |
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| | | |
