No. |
Part Name |
Description |
Manufacturer |
1 |
IRF220 |
N-Channel Power MOSFETs/ 7A/ 150-200V |
Fairchild Semiconductor |
2 |
IRF220 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 5.0A. |
General Electric Solid State |
3 |
IRF220 |
4.0A and 5.0A/ 150V and 200V/ 0.8 and 1.2 Ohm/ N-Channel Power MOSFETs |
Intersil |
4 |
IRF220 |
Trans MOSFET N-CH 200V 5A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
5 |
IRF220 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
6 |
IRF220-223 |
N-Channel Power MOSFETs/ 7A/ 150-200V |
Fairchild Semiconductor |
7 |
IRF2204 |
40V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
8 |
IRF2204L |
40V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
9 |
IRF2204LPBF |
40V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
10 |
IRF2204PBF |
40V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
11 |
IRF2204S |
40V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
12 |
IRF2204SPBF |
40V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
13 |
IRF221 |
N-Channel Power MOSFETs/ 7A/ 150-200V |
Fairchild Semiconductor |
14 |
IRF221 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 5.0A. |
General Electric Solid State |
15 |
IRF221 |
4.0A and 5.0A/ 150V and 200V/ 0.8 and 1.2 Ohm/ N-Channel Power MOSFETs |
Intersil |
16 |
IRF221 |
Trans MOSFET N-CH 150V 5A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
17 |
IRF221 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
18 |
IRF222 |
N-Channel Power MOSFETs/ 7A/ 150-200V |
Fairchild Semiconductor |
19 |
IRF222 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 4.0A. |
General Electric Solid State |
20 |
IRF222 |
4.0A and 5.0A/ 150V and 200V/ 0.8 and 1.2 Ohm/ N-Channel Power MOSFETs |
Intersil |
21 |
IRF222 |
Trans MOSFET N-CH 200V 4A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
22 |
IRF222 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
23 |
IRF223 |
N-Channel Power MOSFETs/ 7A/ 150-200V |
Fairchild Semiconductor |
24 |
IRF223 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 4.0A. |
General Electric Solid State |
25 |
IRF223 |
4.0A and 5.0A/ 150V and 200V/ 0.8 and 1.2 Ohm/ N-Channel Power MOSFETs |
Intersil |
26 |
IRF223 |
Trans MOSFET N-CH 150V 4A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
27 |
IRF223 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
28 |
IRF224 |
(IRF225) HEXFET Transistors |
International Rectifier |
29 |
IRF224 |
(IRF225) HEXFET Transistors |
International Rectifier |
30 |
PB-IRF2204L |
Leaded 40V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
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