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Datasheets found :: 30 Page: | 1 |
Nr. Part Name Description Manufacturer
1 IRF230 N-Channel Power MOSFETs/ 12A/ 150-200 V Fairchild Semiconductor
2 IRF230 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 9.0A. General Electric Solid State
3 IRF230 200V Single N-Channel Hi-Rel MOSFET in a TO-204AA package International Rectifier
4 IRF230 8.0A and 9.0A/ 150V and 200V/ 0.4 and 0.6 Ohm/ N-Channel Power MOSFETs Intersil
5 IRF230 Trans MOSFET N-CH 200V 9A 3-Pin(2+Tab) TO-3 New Jersey Semiconductor
6 IRF230 N-CHANNEL POWER MOSFETS Samsung Electronic
7 IRF230 N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFET SemeLAB
8 IRF230-233 N-Channel Power MOSFETs/ 12A/ 150-200 V Fairchild Semiconductor
9 IRF230N Trans MOSFET N-CH 200V 9A 3-Pin(2+Tab) TO-3 New Jersey Semiconductor
10 IRF231 N-Channel Power MOSFETs/ 12A/ 150-200 V Fairchild Semiconductor
11 IRF231 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 9.0A. General Electric Solid State
12 IRF231 8.0A and 9.0A/ 150V and 200V/ 0.4 and 0.6 Ohm/ N-Channel Power MOSFETs Intersil
13 IRF231 Trans MOSFET N-CH 150V 9A 3-Pin(2+Tab) TO-3 New Jersey Semiconductor
14 IRF231 N-CHANNEL POWER MOSFETS Samsung Electronic
15 IRF231R Trans MOSFET N-CH 150V 9A 3-Pin(2+Tab) TO-3 New Jersey Semiconductor
16 IRF232 N-Channel Power MOSFETs/ 12A/ 150-200 V Fairchild Semiconductor
17 IRF232 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 8.0A. General Electric Solid State
18 IRF232 8.0A and 9.0A/ 150V and 200V/ 0.4 and 0.6 Ohm/ N-Channel Power MOSFETs Intersil
19 IRF232 Trans MOSFET N-CH 200V 7.3A 3-Pin(2+Tab) TO-3 New Jersey Semiconductor
20 IRF232 N-CHANNEL POWER MOSFETS Samsung Electronic
21 IRF232R Trans MOSFET N-CH 200V 7.3A 3-Pin(2+Tab) TO-3 New Jersey Semiconductor
22 IRF233 N-Channel Power MOSFETs/ 12A/ 150-200 V Fairchild Semiconductor
23 IRF233 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 8.0A. General Electric Solid State
24 IRF233 8.0A and 9.0A/ 150V and 200V/ 0.4 and 0.6 Ohm/ N-Channel Power MOSFETs Intersil
25 IRF233 Trans MOSFET N-CH 150V 7.3A 3-Pin(2+Tab) TO-3 New Jersey Semiconductor
26 IRF233 N-CHANNEL POWER MOSFETS Samsung Electronic
27 IRF234 8.1A and 6.5A/ 275V and 250V/ 0.45 and 0.68 Ohm/ N-Channel Power MOSFETs Intersil
28 IRF235 8.1A and 6.5A/ 275V and 250V/ 0.45 and 0.68 Ohm/ N-Channel Power MOSFETs Intersil
29 IRF236 8.1A and 6.5A/ 275V and 250V/ 0.45 and 0.68 Ohm/ N-Channel Power MOSFETs Intersil
30 IRF237 8.1A and 6.5A/ 275V and 250V/ 0.45 and 0.68 Ohm/ N-Channel Power MOSFETs Intersil


Datasheets found :: 30 Page: | 1 |


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