www.DatasheetCatalog.com

  |   Home   |   All manufacturers   |   By Category   |  

Part name, description or manufacturer contain:    
Quick jump to:   1N  2N  2SA  2SC  74  AD  BA  BC  BD  BF  BU  CXA  HCF  IRF  KA  KIA  LA  LM  MC  NE  ST  STK  TDA  TL  UA 
  LM317   LM339   MAX232   NE555   LM324   8051   7805   2N3055   LM358   2N2222   74LS138   TDA7294   TL431   IRF540   1N4148   



Datasheets found :: 24 Page: | 1 |
Nr. Part Name Description Manufacturer
1 IRF250 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 30A. General Electric Solid State
2 IRF250 200V Single N-Channel Hi-Rel MOSFET in a TO-204AE package International Rectifier
3 IRF250 30A/ 200V/ 0.085 Ohm/ N-Channel Power MOSFET Intersil
4 IRF250 Trans MOSFET N-CH 200V 30A 3-Pin(2+Tab) TO-3 New Jersey Semiconductor
5 IRF250 N-CHANNEL POWER MOSFETS Samsung Electronic
6 IRF250 N-CHANNEL POWER MOSFET SemeLAB
7 IRF250CF Trans MOSFET N-CH 200V 30A 3-Pin(2+Tab) TO-3 New Jersey Semiconductor
8 IRF250FI Trans MOSFET N-CH 200V 30A 3-Pin(2+Tab) TO-3 New Jersey Semiconductor
9 IRF250R Trans MOSFET N-CH 200V 30A 3-Pin(2+Tab) TO-3 New Jersey Semiconductor
10 IRF250SMD N.CHANNEL POWER MOSFET SemeLAB
11 IRF251 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 30A. General Electric Solid State
12 IRF251 25A and 30A, 150V and 200V, 0.085 and 0.120 Ohm, N-Channel Power MOSFETs Intersil
13 IRF251 Trans MOSFET 150V 30A 3-Pin(2+Tab) TO-3 New Jersey Semiconductor
14 IRF251 N-CHANNEL POWER MOSFETS Samsung Electronic
15 IRF252 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 25A. General Electric Solid State
16 IRF252 25A and 30A, 150V and 200V, 0.085 and 0.120 Ohm, N-Channel Power MOSFETs Intersil
17 IRF252 Trans MOSFET 200V 25A 3-Pin(2+Tab) TO-3 New Jersey Semiconductor
18 IRF252 N-CHANNEL POWER MOSFETS Samsung Electronic
19 IRF252R Trans MOSFET 200V 25A 3-Pin(2+Tab) TO-3 New Jersey Semiconductor
20 IRF253 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 25A. General Electric Solid State
21 IRF253 25A and 30A, 150V and 200V, 0.085 and 0.120 Ohm, N-Channel Power MOSFETs Intersil
22 IRF253 Trans MOSFET N-CH 150V 25A 3-Pin(2+Tab) TO-3 New Jersey Semiconductor
23 IRF253 N-CHANNEL POWER MOSFETS Samsung Electronic
24 IRF254 250V Single N-Channel Hi-Rel MOSFET in a TO-204AE package International Rectifier


Datasheets found :: 24 Page: | 1 |


© 2018 - www Datasheet Catalog com