www.DatasheetCatalog.com

  |   Home   |   All manufacturers   |   By Category   |  

Part name, description or manufacturer contain:    
Quick jump to:   1N  2N  2SA  2SC  74  AD  BA  BC  BD  BF  BU  CXA  HCF  IRF  KA  KIA  LA  LM  MC  NE  ST  STK  TDA  TL  UA 
  LM317   LM339   MAX232   NE555   LM324   8051   7805   2N3055   LM358   2N2222   74LS138   TDA7294   TL431   IRF540   1N4148   



Datasheets found :: 36 Page: | 1 | 2 |
Nr. Part Name Description Manufacturer
1 IRF830 POWER MOSFET BayLinear
2 IRF830 4.5A, 500V, 1.500 Ohm, N-Channel Power MOSFET Fairchild Semiconductor
3 IRF830 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 4.5A. General Electric Solid State
4 IRF830 500V Single N-Channel HEXFET Power MOSFET in a TO-220AB package International Rectifier
5 IRF830 4.5A/ 500V/ 1.500 Ohm/ N-Channel Power MOSFET Intersil
6 IRF830 Trans MOSFET N-CH 500V 4.5A 3-Pin(3+Tab) TO-220AB New Jersey Semiconductor
7 IRF830 Power Field Effect Transistor ON Semiconductor
8 IRF830 PowerMOS transistor Avalanche energy rated Philips
9 IRF830 N - CHANNEL 500V - 1.35W - 4.5A - TO-220 PowerMESH MOSFET SGS Thomson Microelectronics
10 IRF830 N-CHANNEL 500V - 1.35 OHM - 4.5A - TO-220 POWERMESH MOSFET ST Microelectronics
11 IRF830 500 V,power field effect transistor TRANSYS Electronics Limited
12 IRF830 N-CHANNEL ENHANCEMENT MODE TRSYS
13 IRF830-D Power Field Effect Transistor N-Channel Enhancement Mode Silicon Gate TMOS ON Semiconductor
14 IRF8301M A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET MT package rated at 34 amperes optimized with low on resistance. International Rectifier
15 IRF8301MTRPBF A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET MT package rated at 34 amperes optimized with low on resistance. International Rectifier
16 IRF8302M 30V Single N-Channel HEXFET Power MOSFET and Schottky Diode in a DirectFET MX package rated at 31 amperes optimized with low on resistance. International Rectifier
17 IRF8302MTR1PBF 30V Single N-Channel HEXFET Power MOSFET and Schottky Diode in a DirectFET MX package rated at 31 amperes optimized with low on resistance. International Rectifier
18 IRF8304M A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 28 amperes optimized with low on resistance. International Rectifier
19 IRF8304MTR1PBF A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 28 amperes optimized with low on resistance. International Rectifier
20 IRF8306M 30V Single N-Channel HEXFET Power MOSFET and Schottky Diode in a DirectFET MX package rated at 23 amperes optimized with low on resistance. International Rectifier
21 IRF8306MTR1PBF 30V Single N-Channel HEXFET Power MOSFET and Schottky Diode in a DirectFET MX package rated at 23 amperes optimized with low on resistance. International Rectifier
22 IRF8308M A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 27 amperes optimized with low on resistance. International Rectifier
23 IRF8308MTR1PBF A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 27 amperes optimized with low on resistance. International Rectifier
24 IRF830A 500V Single N-Channel HEXFET Power MOSFET in a TO-220AB package International Rectifier
25 IRF830AL 500V Single N-Channel HEXFET Power MOSFET in a TO-262 package International Rectifier
26 IRF830APBF 500V Single N-Channel HEXFET Power MOSFET in a TO-220AB package International Rectifier
27 IRF830AS 500V Single N-Channel HEXFET Power MOSFET in a D2-Pak package International Rectifier
28 IRF830AS Trans MOSFET N-CH 500V 5A 3-Pin(2+Tab) D2PAK New Jersey Semiconductor
29 IRF830B 500V N-Channel MOSFET Fairchild Semiconductor
30 IRF830FI Trans MOSFET 500V 3A 3-Pin(3+Tab) ISOWATT220 New Jersey Semiconductor


Datasheets found :: 36 Page: | 1 | 2 |


© 2018 - www Datasheet Catalog com