| No. |
Part Name |
Description |
Manufacturer |
| 1 |
2SK161 |
Field Effect Transistor Silicon N Channel Junction Type FM Tuner Applications VHF Band Amplifier Applications |
TOSHIBA |
| 2 |
2SK1610 |
Silicon N-Channel Power F-MOS FET |
Panasonic |
| 3 |
2SK1611 |
V(dss): 800V; silicon N-channel powe F-MOS FET. For high-speed switching, for high frequency power amplification |
Panasonic |
| 4 |
2SK1612 |
Silicon N-Channel Power F-MOS FET |
Panasonic |
| 5 |
2SK1613 |
Silicon N-Channel Power F-MOS FET |
Panasonic |
| 6 |
2SK1614 |
Silicon N-Channel Power F-MOS FET |
Panasonic |
| 7 |
2SK1618 |
Silicon N-Channel MOS FET |
Hitachi Semiconductor |
| 8 |
2SK1618(L) |
Power switching MOSFET |
Hitachi Semiconductor |
| 9 |
2SK1618(S) |
Power switching MOSFET |
Hitachi Semiconductor |
| 10 |
2SK1618L |
Silicon N-Channel MOS FET |
Hitachi Semiconductor |
| 11 |
2SK1618S |
Silicon N-Channel MOS FET |
Hitachi Semiconductor |
| 12 |
3SK161A |
MOS Field Effect Transistor |
NEC |
| 13 |
K1615AC |
Miniature Selenium Diode, common cathode |
ITT Semiconductors |
| 14 |
K1616AC |
Miniature Selenium Diode, doubler |
ITT Semiconductors |
| 15 |
K1617AC |
Miniature Selenium Diode, common anode |
ITT Semiconductors |
| 16 |
KSK161 |
N-CHANNEL JUNCTION FET (FM TUNER VHF AMPLIFIER) |
Samsung Electronic |
| 17 |
KTK161 |
FM RF,AM RF,VHF Band Amp. |
Korea Electronics (KEC) |
| 18 |
UT8R256K1615TBDCA |
256K x 16 SRAM. 15ns access time. Lead finish hot solder dipped. |
Aeroflex Circuit Technology |
| 19 |
UT8R256K1615TBDCC |
256K x 16 SRAM. 15ns access time. Lead finish gold. |
Aeroflex Circuit Technology |
| 20 |
UT8R256K1615TBDCX |
256K x 16 SRAM. 15ns access time. Lead finish factory option. |
Aeroflex Circuit Technology |
| 21 |
UT8R256K1615TBDPC |
256K x 16 SRAM. 15ns access time. Lead finish gold. Prototype flow. |
Aeroflex Circuit Technology |
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