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Datasheets for K4F

Datasheets found :: 154
Page: | 1 | 2 | 3 | 4 | 5 |
No. Part Name Description Manufacturer
1 K4F151611 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode Samsung Electronic
2 K4F151611D 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode Samsung Electronic
3 K4F151611D-J 1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 1K refresh cycle. Samsung Electronic
4 K4F151611D-T 1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 1K refresh cycle. Samsung Electronic
5 K4F151612D 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode Samsung Electronic
6 K4F151612D-J 1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 1K refresh cycle. Samsung Electronic
7 K4F151612D-T 1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 1K refresh cycle. Samsung Electronic
8 K4F16(7)0811(2)D 2M x 8Bit CMOS Dynamic RAM with Fast Page Mode Data Sheet Samsung Electronic
9 K4F160411C-B50 4M x 4bit CMOS dynamic RAM with fast page mode, 5V, 50ns Samsung Electronic
10 K4F160411C-B60 4M x 4bit CMOS dynamic RAM with fast page mode, 5V, 60ns Samsung Electronic
11 K4F160411C-F50 4M x 4bit CMOS dynamic RAM with fast page mode, 5V, 50ns Samsung Electronic
12 K4F160411C-F60 4M x 4bit CMOS dynamic RAM with fast page mode, 5V, 60ns Samsung Electronic
13 K4F160411D 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode Samsung Electronic
14 K4F160411D-B 4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle. Samsung Electronic
15 K4F160411D-F 4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle. Samsung Electronic
16 K4F160412C-B50 4M x 4bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns Samsung Electronic
17 K4F160412C-B60 4M x 4bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns Samsung Electronic
18 K4F160412C-F50 4M x 4bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns Samsung Electronic
19 K4F160412C-F60 4M x 4bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns Samsung Electronic
20 K4F160412D 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode Samsung Electronic
21 K4F160412D-B 4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 2K refresh cycle. Samsung Electronic
22 K4F160412D-F 4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 2K refresh cycle. Samsung Electronic
23 K4F160811D 2M x 8Bit CMOS Dynamic RAM with Fast Page Mode Samsung Electronic
24 K4F160811D-B 2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle. Samsung Electronic
25 K4F160811D-F 2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle. Samsung Electronic
26 K4F160812D 2M x 8Bit CMOS Dynamic RAM with Fast Page Mode Samsung Electronic
27 K4F160812D-B 2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 2K refresh cycle. Samsung Electronic
28 K4F160812D-F 2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 2K refresh cycle. Samsung Electronic
29 K4F170411C-B50 4M x 4bit CMOS dynamic RAM with fast page mode, 5V, 50ns Samsung Electronic
30 K4F170411C-B60 4M x 4bit CMOS dynamic RAM with fast page mode, 5V, 60ns Samsung Electronic


Datasheets found :: 154
Page: | 1 | 2 | 3 | 4 | 5 |



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