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Datasheets for K6R

Datasheets found :: 355
Page: | 1 | 2 | 3 | 4 | 5 |
No. Part Name Description Manufacturer
1 BUK7K6R2-40E Dual N-channel 40 V, 5.8 mΩ standard level MOSFET Nexperia
2 BUK7K6R2-40E Dual N-channel 40 V, 5.8 mΩ standard level MOSFET NXP Semiconductors
3 BUK7K6R8-40E Dual N-channel 30 V, 5.1 mΩ standard level MOSFET Nexperia
4 BUK7K6R8-40E Dual N-channel 40 V, 6.8 mΩ standard level MOSFET NXP Semiconductors
5 BUK9K6R2-40E Dual N-channel TrenchMOS logic level FET Nexperia
6 BUK9K6R2-40E Dual N-channel 40 V, 6.2 mΩ logic level MOSFET NXP Semiconductors
7 BUK9K6R8-40E Dual N-channel 40 V, 7.2 mΩ logic level MOSFET Nexperia
8 BUK9K6R8-40E Dual N-channel 40 V, 7.2 mΩ logic level MOSFET NXP Semiconductors
9 ERJT14LK6R8U Anti-Pulse Small & High Power Thick Film Chip Resistors Panasonic
10 ERU5TBK6R8 Leaded Resistors - Wirewound Resistor with Thermal Cut-Offs Panasonic
11 ERU5TCK6R8 Leaded Resistors - Wirewound Resistor with Thermal Cut-Offs Panasonic
12 K6R1004C1D 256K x 4 Bit (with /OE) High-Speed CMOS Static RAM Data Sheet Samsung Electronic
13 K6R1004C1D-JC(I)10 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. Samsung Electronic
14 K6R1004C1D-JC(I)10_12 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. Samsung Electronic
15 K6R1004C1D-JC(I)12 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. Samsung Electronic
16 K6R1004C1D-JC10 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). Samsung Electronic
17 K6R1004C1D-JI10 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). Samsung Electronic
18 K6R1004C1D-KC10 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). Samsung Electronic
19 K6R1004C1D-KI10 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). Samsung Electronic
20 K6R1004V1D 256K x 4 Bit (with /OE) High-Speed CMOS Static RAM(3.3V Operating) Row Select Data Sheet Samsung Electronic
21 K6R1004V1D-JC(I)08 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. Samsung Electronic
22 K6R1004V1D-JC(I)08_10 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. Samsung Electronic
23 K6R1004V1D-JC(I)10 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. Samsung Electronic
24 K6R1004V1D-JC08 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). Samsung Electronic
25 K6R1004V1D-JC10 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). Samsung Electronic
26 K6R1004V1D-JI08 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). Samsung Electronic
27 K6R1004V1D-JI10 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). Samsung Electronic
28 K6R1004V1D-KC08 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). Samsung Electronic
29 K6R1004V1D-KC10 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). Samsung Electronic
30 K6R1004V1D-KI08 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). Samsung Electronic


Datasheets found :: 355
Page: | 1 | 2 | 3 | 4 | 5 |



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