| No. |
Part Name |
Description |
Manufacturer |
| 1 |
2N3652 |
35A silicon controlled rectifier. Vrsom 400V. |
General Electric Solid State |
| 2 |
2N687 |
25A silicon controlled rectifier. Vrsom 400V. |
General Electric Solid State |
| 3 |
C106D |
4A sensitive-gate silicon controlled rectifier. Vrrm 400V. |
General Electric Solid State |
| 4 |
C122D |
8A silicon controlled rectifier. Vrrom 400V. |
General Electric Solid State |
| 5 |
CLY10 |
GaAs FET (Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz) |
Siemens |
| 6 |
CLY15 |
GaAs FET (Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz) |
Siemens |
| 7 |
CLY5 |
GaAs FET (Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz) |
Siemens |
| 8 |
IRU3037ACF |
8 PWM 400 KHz Sync Contr in a 8-Pin TSSOP package |
International Rectifier |
| 9 |
IRU3037ACFPBF |
8 PWM 400 KHz Sync Contr in a 8-Pin TSSOP package |
International Rectifier |
| 10 |
IRU3037ACFTR |
8 PWM 400 KHz Sync Contr in a 8-Pin TSSOP package |
International Rectifier |
| 11 |
IRU3037ACFTRPBF |
8 PWM 400 KHz Sync Contr in a 8-Pin TSSOP package |
International Rectifier |
| 12 |
IRU3037ACS |
8 PWM 400 KHz Sync Contr in a 8-Pin SOIC(NB) package |
International Rectifier |
| 13 |
IRU3037ACSPBF |
8 PWM 400 KHz Sync Contr in a 8-Pin SOIC(NB) package |
International Rectifier |
| 14 |
IRU3037ACSTR |
8 PWM 400 KHz Sync Contr in a 8-Pin SOIC(NB) package |
International Rectifier |
| 15 |
Q62702-L90 |
GaAs FET (Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz) |
Siemens |
| 16 |
Q62702-L94 |
GaAs FET (Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz) |
Siemens |
| 17 |
Q62702-L99 |
GaAs FET (Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz) |
Siemens |
| 18 |
S2060C |
4A sensitive-gate silicon controlled rectifier. Vrsxm 400V. |
General Electric Solid State |
| 19 |
S2061C |
4A sensitive-gate silicon controlled rectifier. Vrsxm 400V. |
General Electric Solid State |
| 20 |
S2600D |
High voltage, medium current silicon controlled rectifier. Vdrm 400V. |
General Electric Solid State |
| 21 |
S2700D |
High voltage, medium current silicon controlled rectifier. Vdrm 400V. |
General Electric Solid State |
| 22 |
S2800D |
10A silicon controlled rectifier. Vdrm, Vrrm 400V. |
General Electric Solid State |
| 23 |
T2300D |
2.5-A sensitive-gate silicon triac. Max 3 mA gate, Vdrom 400 V. |
General Electric Solid State |
| 24 |
T2301D |
2.5-A sensitive-gate silicon triac. Max 4 mA gate, Vdrom 400 V. |
General Electric Solid State |
| 25 |
T2302D |
2.5-A sensitive-gate silicon triac. Max 10 mA gate, Vdrom 400 V. |
General Electric Solid State |
| 26 |
T2500D |
High voltage, 6-A silicon triac. Vdrm 400 V. |
General Electric Solid State |
| 27 |
T2800D |
High voltage, 8-A silicon triac. Vdrom 400 V. |
General Electric Solid State |
| 28 |
T2802D |
High voltage, 8-A silicon triac. Vdrom 400 V. |
General Electric Solid State |
| 29 |
T6000D |
16-A silicon triac. Vdrom 400 V. |
General Electric Solid State |
| 30 |
T6001D |
16-A silicon triac. Vdrom 400 V. |
General Electric Solid State |
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