| No. |
Part Name |
Description |
Manufacturer |
| 1 |
APT20M16B2FLL |
POWER MOS 7 200V 100A 0.016 Ohm |
Advanced Power Technology |
| 2 |
APT20M16B2FLLG |
FREDFETs |
Microsemi |
| 3 |
APT20M16B2LL |
POWER MOS 7 200V 100A 0.016 Ohm |
Advanced Power Technology |
| 4 |
APT20M16B2LLG |
MOSFET |
Microsemi |
| 5 |
ESM16B |
10A NPN silicon power metal transistor 400V 150W SWITCHMODE series |
Motorola |
| 6 |
ESM16B |
NPN power transistor Triple Diffused - Fast switching |
SESCOSEM |
| 7 |
FU-68PDF-510M16B |
1.55 um DFB-LD MODULE WITH POLARIZATION MAINTAINING FIBER PIGTAIL (WAVELENGTH SELECTED/ BIAS CIRCUIT INTEGRATED/ DIGITAL APPLICATION) |
Mitsubishi Electric Corporation |
| 8 |
FU-68PDF-520M16B |
1.55 um DFB-LD MODULE WITH POLARIZATION MAINTAINING FIBER PIGTAIL (WAVELENGTH SELECTED/ BIAS CIRCUIT INTEGRATED/ DIGITAL APPLICATION) |
Mitsubishi Electric Corporation |
| 9 |
FU-68PDF-V510M16B |
Wavelength:1532nm DFB-LD module with polarization maintaining fiber pigtail |
Mitsubishi Electric Corporation |
| 10 |
M16B |
16 Lead (0.300 in. Wide) Molded Small Outline Package, JEDEC |
National Semiconductor |
| 11 |
MT2854M16B1LL |
null |
Micron Technology |
| 12 |
MT28S4M16B1LC |
SYNCFLASH MEMORY |
Micron Technology |
| 13 |
MT28S4M16B1LL |
SYNCFLASH MEMORY |
Micron Technology |
| 14 |
T15V2M16B |
128K X 16 LOW POWER CMOS STATIC RAM |
Taiwan Memory Technology |
| 15 |
T15V2M16B-55S |
128K X 16 LOW POWER CMOS STATIC RAM |
Taiwan Memory Technology |
| 16 |
T15V2M16B-55SI |
128K X 16 LOW POWER CMOS STATIC RAM |
Taiwan Memory Technology |
| 17 |
T15V2M16B-70C |
128K X 16 LOW POWER CMOS STATIC RAM |
Taiwan Memory Technology |
| 18 |
T15V2M16B-70CI |
128K X 16 LOW POWER CMOS STATIC RAM |
Taiwan Memory Technology |
| 19 |
XCCACEM16BG388I |
16 Mb system ACE MPM |
Xilinx |
| | | |
