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Datasheets found :: 114 Page: | 1 | 2 | 3 | 4 |
Nr. Part Name Description Manufacturer
1 CM10MD3-12H MITSUBISHI IGBT MODULES MEDIUM POWER SWITCHING USE FLAT-BASE TYPE, INSULATED TYPE Mitsubishi Electric Corporation
2 CM10MD3-12H CI Module Single Phase Converter Three Phase Inverter 10 Amperes/600 Volts Powerex Power Semiconductors
3 CM15MD3-12H MITSUBISHI IGBT MODULES MEDIUM POWER SWITCHING USE FLAT-BASE TYPE, INSULATED TYPE Mitsubishi Electric Corporation
4 CM15MD3-12H CI Module Single Phase Converter Three Phase Inverter 15 Amperes/600 Volts Powerex Power Semiconductors
5 CM20MD3-12H MITSUBISHI IGBT MODULES MEDIUM POWER SWITCHING USE FLAT-BASE TYPE, INSULATED TYPE Mitsubishi Electric Corporation
6 CM20MD3-12H CI Module Single Phase Converter Three Phase Inverter 20 Amperes/600 Volts Powerex Power Semiconductors
7 CM30MD3-12H MITSUBISHI IGBT MODULES MEDIUM POWER SWITCHING USE FLAT-BASE TYPE, INSULATED TYPE Mitsubishi Electric Corporation
8 CM30MD3-12H CI Module Single Phase Converter Three Phase Inverter 30 Amperes/600 Volts Powerex Power Semiconductors
9 EMD3 Transistors > Complex Digital Transistors ROHM
10 EMD38 PNP+NPN Digital transistor (with built-in resistors) ROHM
11 EMD38T2R PNP+NPN Digital transistor (with built-in resistors) ROHM
12 EMD3FHA PNP+NPN Digital transistor (Corresponds to AEC-Q101) ROHM
13 EMD3FHAT2R PNP+NPN Digital transistor (Corresponds to AEC-Q101) ROHM
14 EMD3S Bridge Rectifier Rectron Semiconductor
15 EMD3T2R General purpose (dual digital transistors) ROHM
16 FMD3S SINGLE-PHASE GLASS PASSIVATED MINI FAST RECOVERY SURFACE MOUNT BRIDGE RECTIFIER (VOLTAGE RANGE 50 to 1000 Volts CURRENT 0.8 Ampere) Rectron Semiconductor
17 IMD3A Transistors > Complex Digital Transistors ROHM
18 IMD3AT108 PNP+NPN Digital transistor (with built-in resistors) ROHM
19 IMD3AT110 General purpose (dual digital transistors) ROHM
20 MAX6738XKMD3-T Vcc1: 4.375 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
21 MAX6739XKMD3-T Vcc1: 4.375 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
22 MAX6742XKMD3-T Vcc1: 4.375 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
23 MAX6745XKMD3-T Vcc1: 4.375 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
24 MAX78638+MD3/A00 Three-Phase Energy Measurement and Motor Diagnostics Device MAXIM - Dallas Semiconductor
25 MAX78638+MD3/A00T Three-Phase Energy Measurement and Motor Diagnostics Device MAXIM - Dallas Semiconductor
26 MAX78638+MD3EVK1# Three-Phase Energy Measurement and Motor Diagnostics Device MAXIM - Dallas Semiconductor
27 MBR20035CT Diode Schottky 35V 200A 3-Pin(3+Tab) MD3CC New Jersey Semiconductor
28 MBR20045CT Diode Schottky 45V 200A 3-Pin(3+Tab) MD3CC New Jersey Semiconductor
29 MBR20050 Diode Schottky 80V 100A 3-Pin(3+Tab) MD3CC New Jersey Semiconductor
30 MBR20050CT Diode Schottky 80V 100A 3-Pin(3+Tab) MD3CC New Jersey Semiconductor


Datasheets found :: 114 Page: | 1 | 2 | 3 | 4 |


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