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Datasheets found :: 2273 Page: | 1 | 2 | 3 | 4 | 5 |
Nr. Part Name Description Manufacturer
1 24LC22A The Microchip Technology Inc. 24LC22A is a 256 x 8-bit dual-mode Electrically Erasable PROM. This device is designed for use in applications requiring storage and serial transmission of configuration and control information. Two modes of o Microchip
2 2N6383 10 A N-P-N darlington power transistor. 40 V. 100 W. Gain of 1000 at 5 A. General Electric Solid State
3 2N6384 10 A N-P-N darlington power transistor. 60 V. 100 W. Gain of 1000 at 5 A. General Electric Solid State
4 2N6385 10 A N-P-N darlington power transistor. 80 V. 100 W. Gain of 1000 at 5 A. General Electric Solid State
5 2N6386 10 A N-P-N darlington power transistor. 40 V. 65 W. Gain of 1000 at 3 A. General Electric Solid State
6 2N6387 10 A N-P-N darlington power transistor. 60 V. 65 W. Gain of 1000 at 5 A. General Electric Solid State
7 2N6388 10 A N-P-N darlington power transistor. 80 V. 65 W. Gain of 1000 at 5 A. General Electric Solid State
8 2N6530 8 A N-P-N darlington power transistor. 80 V. 60 W. Gain of 1000 at 5 A. General Electric Solid State
9 2N6531 8 A N-P-N darlington power transistor. 100 V. 60 W. Gain of 500 at 3 A. General Electric Solid State
10 2N6532 8 A N-P-N darlington power transistor. 100 V. 60 W. Gain of 1000 at 5 A. General Electric Solid State
11 2N6533 8 A N-P-N darlington power transistor. 120 V. 60 W. Gain of 1000 at 3 A. General Electric Solid State
12 2N6576 15 A N-P-N darlington power transistor. 60 V. 120 W. Gain of 2000 at 4 A. General Electric Solid State
13 2N6577 15 A N-P-N darlington power transistor. 90 V. 120 W. Gain of 2000 at 4 A. General Electric Solid State
14 2N6578 15 A N-P-N darlington power transistor. 120 V. 120 W. Gain of 2000 at 4 A. General Electric Solid State
15 2N6648 10 A P-N-P darlington power transistor. -40 V. 70 W. Gain of 1000 at 5 A. General Electric Solid State
16 2N6649 10 A P-N-P darlington power transistor. -60 V. 70 W. Gain of 1000 at 5 A. General Electric Solid State
17 2N6650 10 A P-N-P darlington power transistor. -80 V. 70 W. Gain of 1000 at 5 A. General Electric Solid State
18 2N6666 10 A P-N-P darlington power transistor. -40 V. 65 W. Gain of 1000 at 3 A. General Electric Solid State
19 2N6667 10 A P-N-P darlington power transistor. -60 V. 65 W. Gain of 1000 at 5 A. General Electric Solid State
20 2N6668 10 A P-N-P darlington power transistor. -80 V. 65 W. Gain of 1000 at 5 A. General Electric Solid State
21 2SK2597 N-CHANNEL SILICON POWER MOSFET FOR BASE STATION OF 900 MHz BAND CELLULAR PHONE POWER AMPLIFICATION NEC
22 80C32E Radiation Tolerant ROMless version of the 80C52 single chip 8-bit microcontroller. Atmel
23 94SS Miniaturized version of types 94SA, 94SC, 94SL Vishay
24 AB-009 SINGLE-SUPPLY OPERATION OF ISOLATION AMPLIFIERS Burr Brown
25 AB-011 LOW POWER SUPPLY VOLTAGE OPERATION OF REF102 10.0V PRECISION VOLTAGE REFERENCE Burr Brown
26 AB-021 SYNCHRONIZATION OF ISO120 Burr Brown
27 AB-057 COMPARISON OF NOISE PERFORMANCE BETWEEN A FET TRANSIMPEDANCE AMPLIFIER AND A SWITCHED INTEGRATOR Burr Brown
28 AB-067 Single-Supply Operation of Operational Amplifiers Burr Brown
29 AB-078 DESIGN AND APPLICATION OF TRANSFORMER-COUPLED HYBRID ISOLATION AMPLIFIER MODEL 3656 Burr Brown
30 AB-089 A CLARIFICATION OF USE HIGH-SPEED S/H TO IMPROVE SAMPLING ADC PERFORMANCE Burr Brown


Datasheets found :: 2273 Page: | 1 | 2 | 3 | 4 | 5 |


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