| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1N291 |
120 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
| 2 |
1N291 |
Gold Bond Germanium Diode |
ITT Semiconductors |
| 3 |
1N291 |
Germanium Signal Diode |
Motorola |
| 4 |
1N2910 |
Signal Diode |
Motorola |
| 5 |
1N2911 |
Signal Diode |
Motorola |
| 6 |
1N2911 |
High voltage silicon rectifiers (epoxy encapsulation) |
SESCOSEM |
| 7 |
1N2912 |
Signal Diode |
Motorola |
| 8 |
1N2913 |
Signal Diode |
Motorola |
| 9 |
1N2914 |
Signal Diode |
Motorola |
| 10 |
1N2915 |
Signal Diode |
Motorola |
| 11 |
1N2916 |
Signal Diode |
Motorola |
| 12 |
1N2917 |
Signal Diode |
Motorola |
| 13 |
1N2918 |
Signal Diode |
Motorola |
| 14 |
1N2919 |
Signal Diode |
Motorola |
| 15 |
1N2919 |
High voltage silicon rectifiers (epoxy encapsulation) |
SESCOSEM |
| 16 |
2N291 |
Germanium PNP Transistor |
Motorola |
| 17 |
2N2910 |
Silicon NPN Transistor |
Motorola |
| 18 |
2N2910 |
Silicon transistor NPN differential amplifiers |
Sprague |
| 19 |
2N2911 |
Silicon NPN Transistor |
Motorola |
| 20 |
2N2912 |
PNP high-speed, high-frequency power transistor |
Motorola |
| 21 |
2N2912 |
Germanium PNP Transistor |
Motorola |
| 22 |
2N2913 |
Leaded Small Signal Transistor Dual |
Central Semiconductor |
| 23 |
2N2913 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 24 |
2N2913 |
Silicon NPN Transistor |
Motorola |
| 25 |
2N2913 |
Bipolar Transistor |
New Jersey Semiconductor |
| 26 |
2N2913 |
DUAL NPN PLANAR TRANSISTORS IN TO77 PACKAGE |
SemeLAB |
| 27 |
2N2913MP |
Bipolar Transistor |
New Jersey Semiconductor |
| 28 |
2N2914 |
Leaded Small Signal Transistor Dual |
Central Semiconductor |
| 29 |
2N2914 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 30 |
2N2914 |
Silicon NPN Transistor |
Motorola |
| | | |
